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In order to overcome the intrinsic limitations of Cu2O, among the various substitutes for p-type semiconducting materials, CuFeO2 has been reported as a strong candidate for its proper band gap of 1.5 eV, the larger absorption coefficient, and the superior stability, compared to Cu2O. However, notable photocathode activity for CuFeO2 has not been shown up to recently. The existence of a surface disordered layer that pins down the fermi-level is mainly pointed out as the cause of the inhibited hydrogen evolution reaction(HER). In this research, by Introduction of the Ga2O3 over-layer and Indium alloying therein, surface states on the surface of CuFeO2 has been addressed and the conduction band edge offset is also controlled, achieving an enhanced HER activity with the over-layer hetero-structure engineering
Photoelectrochemical water splitting has gained much attention as a mean of producing hydrogen. To expedite the use of sunlight upon the process, inorganic semiconductors have been widely adopted due to their superior optoelectronic properties. However, poor charge separation and accompanying significant charge recombination have been the limitation for scaling up. To address the challenges, we introduced the type II hetero structure to facilitate charge separation within photosensitizers. Herein, hydrothermally grown TiO<sub>2</sub> nanowire was firstly decorated with Au NCs using deposition-precipitation method. Then, CdS and CdSe NCs were sequentially deposited onto TiO<sub>2</sub>/Au structure by chemical bath deposition. As a result, cyclic voltammetry (CV) confirmed the largely increased photocurrent density. Moreover, further introduction of Au NCs showed enhanced photocurrent density and larger exchange current from CV analysis, and decreased impedance, denoting the enhanced charge transfer.