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양승국,조정희,이성욱,이창원,박상종,채희선 대한전자공학회 2013 Journal of semiconductor technology and science Vol.13 No.4
As the feature size of integrated circuitscontinues to decrease, the challenge of achieving anoxidation-free exposed layer after photoresist (PR)stripping is becoming a critical issue for semiconductordevice fabrication. In this article, the hydrogenplasma characteristics in direct plasma and the PRstripping rate in remote plasma were studied using a120 Φ cylindrical inductively coupled plasma source. E mode, H mode and E-H mode transitions wereobserved, which were defined by matching the Vrmsand total impedance. In addition, the dependence ofthe E-H mode transition on pressure was examinedand the corresponding plasma instability regions wereidentified. The plasma density and electron temperatureincreased gradually under the same processconditions. In contrast, the PR stripping ratedecreased with increasing proportion of H2 gas inmixed H2/N2 plasma. The decrease in concentration ofreactive radicals for the removal of PR withincreasing H2 gas flow rate suggests that NH radicalshave a dominant effect as the main volatile product.
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