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아리온밧볼드(Ariun Batbold),오던토이아 바산체렌(Odontuya Baasantseren),방재훈(Jae-Hoon Bang),안병철(Bierng-Chearl Ahn),임태욱(Tae-Wook Lim) 한국정보기술학회 2012 한국정보기술학회논문지 Vol.10 No.2
This paper describes the design of an X-band dielectric resonator oscillator(DRO) based on a pseudomorphic high electron mobility transistor(pHEMT). DRO’s are widely used as a local oscillator for their high stability. In this paper, we realized a DRO employing a pHEMP with high efficiency and stable output, a series-coupled dielectric resonator, input and output matching circuits, a frequency-tuning plate, and a metallic cavity. The transistor’s instability is increased by adding a capacitive impedance at the source of the pHEMT. Starting from the initial design based on the oscillators small signal model, an optimum design of the oscillator is obtained using a CAD tool. The designed oscillator is fabricated and tested. The fabricated oscillator shows a stable oscillation with 1.5-4.5㏈m output at 10.5-10.9㎓.