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심재준,이성욱,한동섭,김태형,이상석,한근조 東亞大學校 大學院 2005 大學院論文集 Vol.30 No.-
MEMS structures generally have been fabricated using surface-machining method, but the interface failure between silicon substrate and evaporated thin film frequently was taken place due to the residual stress induced by the fluctuated thermal loads. Therefore this paper studied the residual stress caused the thermal loads in the thin film and introduce the simple method to measure the trend of the residual stress by the indentation. Specimens were made from varialde materials such as Al, Au and Cu and thermal load was applied repeatedly. The residual stress was measured by Finite Element Analysis and the existence of the residual stress due to thermal load was verified by the experimental results. The indentation length of the thermal loaded specimens increased maximum 15% comparing with the virgin thin film caused by tensile residual stress. The finite element analysis results are similar to indentation test.