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      • KCI등재

        비냉각 열 영상 시스템용 BSCT 320×240 IR-FPA의 구현

        姜大錫,송성해,신경욱,박재우,윤동한,韓明洙 대한전자공학회 2002 電子工學會論文誌-SD (Semiconductor and devices) Vol.39 No.11

        BSCT 320×240 IRFPA detector module is implemented, which is a key component in uncooled thermal imaging systems. The detector module consists of two parts, infrared sensitive pixel array and read-out integrated circuit(ROIC). The BSCT 320×240 pixels are made by laser scribe process and 10-㎛ micro-bump to satisfy 50-㎛ pitch and 95-% fill-factor. The ROIC has been designed to electrically address the pixels sequentially and to improve signal-to-noise ratio with single transistor amplifier, HPF, tunable LPF and clamp circuit. The fabricated hybrid chip of detector and ROIC has been mounted on the TEC built-in ceramic package for more stable operation and tested for lots of electrical and optical properties. The IRFA sample has shown successful properties and met with good results of fill-factor, detectivity and responsivity. 적외선 열 영상 system에서 가장 핵심이 되는 BSCT 320X240 IRFPA를 구현하였다. 검출기 module은 두 개의 부분, 즉 적외선 감지 pixel의 array와 감지된 신호를 읽어내는 ROIC로 구성된다. 50-㎛의 pitch와 95-%의 fill-factor를 만족하도록, laser scribe공정과 10-㎛ 크기의 ball을 갖는 micro bump공정을 적용하였다. ROIC는 선택된 신호를 읽어서 순차적으로 출력하게 설계되었으며, 단일 transistor amplifier, HPF, tunable LPF 그리고 clamp circuit를 삽입하여 SNR이 개선되도록 설계하였다. Detector와 ROIC의 결합으로 제작된 hybrid chip은 좀더 안정한 동작을 하도록 TEC가 내장된 ceramic package에 탑재하였다. 제작된 IRFPA sample은 원하는 특성을 만족하였으며, 특히 fill-factor, 탐지도, 반응도면에서 설계의 목표에 잘 근사함을 알 수 있었다.

      • SiGe 에피택셜 베이스 층을 이용한 HBT의 특성에 관한 연구

        신창호,송성해 금오공과대학교 2008 論文集 Vol.29 No.-

        This paper describes an experimental research on the HBT process that uses a SiGe epitaxy layer, and also a HBT with maximwn cutoff frequency of ffiGHz followed by a discussion on their characteristics. The HBT applied in this research, as an npn structure, used a base with Si₁-_(x)Ge_(x) epitaxial layer. The Si₁-_(x)Ge_(x) epitaxy layer used in the base area, as a graded Ge profile, base depth as W_(B)=650A and Ge mole fraction as x=0.12. The electrical characteristics on the fabricated chip were shown in C-E breakdown voltage as 3.92V, current gain as 165, and maximnn cutoff frequency as ffiGHz. As a result, this research acquired the design and process technology that can produce a HBT using the Si₁-_(x)Ge_(x) layer as its base by using the silicon process technology.

      • KCI등재

        Formax 매질을 이용한 이동통신 단말기용 삼중대역 플라스틱 칩 안테나에 관한 연구

        이영훈,송성해,Lee, Young-Hun,Song, Sung-Hae 한국정보통신학회 2007 한국정보통신학회논문지 Vol.11 No.12

        본 논문은 휴대 단말기에 적용할 수 있는 삼중대역(Triple-band) 프라스틱 칩 안테나에 관하여 연구하였다. 프라스틱 칩은 PVC(Polyvilyl chloride)계열의 Foamex 매질을 사용하였으며, 전기적인 특성은 유전율이 1.9이고, 절연밀도는 112KV/cm이다. 프라스틱 칩 안테나는 세라믹 칩 안테나보다 잘 파손되지 않고, 이득과 효율이 좋은 장점을 가지고 있다. 본 논문에서는 4종류의 삼중대역 프라스틱 칩 안테나를 제작하고 실험하였다. 실험 결과 삼중대역에서 공진하였고, 안테나 이득은-2dB이상이고, 안테나 패턴은 일반적인 칩 안테나와 비슷한 전 방향 특성을 갖는다. 따라서 Foamex 매질을 이용하여 구현된 안테나는 삼중대역용 휴대폰과 다양한 무선통신시스템에 적용될 수 있다. In this paper, triple-band plastic chip antennas for mobile terminal are investigated. Plastic chip antenna is composed of Foamex material with circle of PVC(Polyvilyl chloride). For its electric characteristics, the dielectric constant is 1.9, the insulation intensity is 112KV/cm. Plastic chip antennas are don't tend to break easily against to external shock, have more gain and efficiency than ceramic chip antennas. Triple-band plastic chip antennas of four type are implemented and experimented. From the experiments results, the antenna resonate at the triple-band, the gain of the antennas has about above -2dB, the pattern is ommidirectional the same as the conventional antennas. So, the antennas realized with Foamex material will be application for mobile phone antenna operated at the triple band which is cellular band and Korea-PCS band and ISM band or the antenna for other wireless communication system.

      • Strained-Si₁-xGex에피택셜층의 건식산화

        김동연,송성해,신창호 金烏工科大學校 1997 論文集 Vol.18 No.-

        Thermal oxidation of strained ?? layer grown by MBE(Molecular Beam Epitaxy) with Ge mole fractions of x=0.05, x=0.10, x=0.15, and x=0.20 were examined in view points of growth rate, and Ge profile after oxidation. Then the samples were compared with oxidation rate of pure silicon. During oxidation, the Ge-rich layer was formed by the segregation of Ge at the interface of ??/SiO₂. The oxide of ?? layer was found to be SiO₂only. The dry oxidation rate was equal to that of pure Si regardless of Ge mole fraction at 700℃ and 800℃, while it was decreased at both 900℃ and 1000℃ as the Ge mole fraction was increased. The dry oxidation rates were reduced for heavy Ge concentration, and large oxidation time. In the parabolic growth region of ?? oxidation. The activation energy are slightly enhanced due to the presence of Ge-rich layer.

      • SCOPUSKCI등재

        BPSG막의 Flow 특성

        홍성현,이종무,송성해 한국세라믹학회 1989 한국세라믹학회지 Vol.26 No.3

        Effects of annealing temperature, time, and atmospehre on the flow characteristics of Atmospheric Pressure Chemical Vapor Deposition-borophosphosilicate glass were investigated. Stable step coverage can be obtained by annealing the BPSG film at 90$0^{\circ}C$ for 30 minutes in N2 atmosphere, but further heat treatment isnot effective. Flow characteristics of the BPSG film was better in steam atmosphere than in N2 atmosphere, and the factors which cause it were analyzed. The concentration of boron in the BPSG film was measured pretty accurately by FTIR spectrum. Boron content in the BPSG film was reduced by annealing treatment. The decrement of boron was greater in steam atmosphere than in the N2 atmosphere. Also it was found from the FTIR spectroscopic analysis that PH3 inhibited the oxidation of B2H6.

      • KCI등재

        Si<sub>1-x</sub>Ge<sub>x</sub> 층의 건식산화 동안 Ge 재 분포와 상호 확산의 영향

        신창호,이영훈,송성해,Shin, Chang-Ho,Lee, Young-Hun,Song, Sung-Hae 한국전기전자재료학회 2005 전기전자재료학회논문지 Vol.18 No.12

        We have studied the Ge redistribution after dry oxidation and the oxide growth rate of $Si_{1-x}Ge_x$ epitaxial layer. Oxidation were performed at 700, 800, 900, and $1,000\;^{\circ}C$. After the oxidation, the results of RBS (Rutherford Back Scattering) & AES(Auger Electron Spectroscopy) showed that Ge was completely rejected out of the oxide and pile up at $Si_{1-x}Ge_x$ interface. It is shown that the presence of Ge at the $Si_{1-x}Ge_x$ interface changes the dry oxidation rate. The dry oxidation rate was equal to that of pure Si regardless of Ge mole fraction at 700 and 800$^{\circ}C$, while it was decreased at both 900 and $1,000^{\circ}C$ as the Ge mole fraction was increased. The dry of idation rates were reduced for heavy Ge concentration, and large oxiidation time. In the parabolic growth region of $Si_{1-x}Ge_x$ oxidation, the parabolic rate constant are decreased due to the presence of Ge-rich layer. After the longer oxidation at the $1,000^{\circ}C$, AES showed that Ge peak distribution at the $Si_{1-x}Ge_x$ interface reduced by interdiffusion of silicon and germanium.

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