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볼츠만 방정식에 의한 C<sub>3</sub>F<sub>8</sub>분자가스의 전리 및 부착 계수에 관한 연구
송병두,전병훈,하성철,Song, Byoung-Doo,Jeon, Byoung-Hoon,Ha, Sung-Chul 한국전기전자재료학회 2005 전기전자재료학회논문지 Vol.18 No.4
CF₄ molecular gas is used in most of semiconductor manufacture processing and SF/sub 6/ molecular gas is widely used in industrial of insulation field. but both of gases have defect in global warming. C₃F/sub 8/ gas has large attachment cross-section more than these gases, moreover GWP, life-time and price of C₃F/sub 8/ gas is lower than them, therefor it is important to calculate transport coefficients of C₃F/sub 8/ gas like electron drift velocity, ionization coefficient, attachment coefficient, effective ionization coefficient and critical E/N. The aim of this study is to get these transport coefficients for imformation of the insulation strength and efficiency of etching process. In this paper, we calculated the electron drift velocity (W) in pure C₃F/sub 8/ molecular gas over the range of E/N=0.1∼250 Td at the temperature was 300 K and gas pressure was 1 Torr by the Boltzmann equation method. The results of this paper can be important data to present characteristic of gas for plasma etching and insulation, specially critical E/N is a data to evaluate insulation strength of a gas.
볼츠만 방정식에 의한 CF<sub>4</sub> 분자가스의 전자이동속도 특성에 관한 연구
송병두,하성철,Song, Byoung-Doo,Ha, Sung-Chul 한국전기전자재료학회 2004 전기전자재료학회논문지 Vol.17 No.11
This paper describes the information for quantitative simulation of weakly ionized plasma. In previous paper, we calculated the electron transport coefficients by using two-term approximation of Boltzmann equation. But there is difference between the result of the two-term approximation of the Boltzmann equation and experiments in pure CF$_4$ molecular gas and in CF$_4$+Ar gas mixture. Therefore, In this paper, we calculated the electron drift velocity (W) in pure CF$_4$ molecular gas and CF$_4$+Ar gas mixture (1 %, 5 %, 10 %) for range of E/N values from 0.17~300 Td at the temperature was 300 K and pressure was 1 Torr by multi-term approximation of the Boltzmann equation by Robson and Ness. The results of two-term and multi-term approximation of the Boltzmann equation have been compared with each other for a range of E/N.
공공일괄사업 실시설계단계의 건설사업관리기반 파트너링모델
송병두(Song Byung-Doo),김종일(Kim Jong-Il),김해곤(Kim Hae-Gon),송종관(Song Jong-Kwan),홍태훈(Hong Tae-Hoon),현창택(Hyun Chang-Taek),구교진(Koo Kyo-Jin) 대한건축학회 2007 대한건축학회논문집 Vol.23 No.12
Construction documents stage is very important stage which affect a project success or failure in design-build, however, there have numerous disputes between owners and design-builder. After review of design development, an owner and a construction manager request increase material quality and change floor plans or a site plan, however, a contractor is unwilling to change design documents without offset alternatives against cost increased by that request. This research has been drawn the main obstruction factors from arisen problem and claim cases in construction documents stage in design-build projects and presents considerations of substance of RFP (Request of Proposals), application of partnering, and set up fixed date of design development. To prevent disputes between an owner and a design-builder in construction documents stage in design-build, this research presents the new partnering model integrating project and strategic partnering by a construction manager and verify the effectiveness by interviews.
MCS-BE에 의한 $SF_6$+He 혼합기체의 전자수송특성 해석
하설철,송병두,유회영,김상남,백승권 한국전기전자재료학회 2000 전기전자재료학회논문지 Vol.13 No.4
The paper describes the electron transport characteristics in SP$_{6}$+He gas calculated E/N values 0.1~700[Td] by the Monte Carlos simulation and Boltzmann equation method using a set of electron collision cross sections determined by the authors and the values of electron swarm parameters obtained by TOF method. This study gained the values of the electron swarm parameters such as the electron drift velocity the electron ionization or attachment coefficients longitudinal and transverse diffusion coefficients for SF$_{6}$+He gas at a range of E/N.E/N.