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蘇明基 江原大學校 産業科學硏究所 1982 産業技術硏究 Vol.2 No.-
Polycrystalline silicon layers have been deposited by a chemical vapor deposition technique using SiCl₄, H₂gas mixture on single crystal silicon substrates. In this work, the effects of depostion temperature and total flow rate on the deposition rate of polycrystalline silicon are investigated. From the experimental results it was found that the formation reaction of polycrystalline silicon was limited by surface reaction and mass transfer controlled as the deposition temperature was increased. The morphology of polycrystalline silicon layer changed from a fine structure to a coarse one as the deposition temperature was increased.
소명기,Kyoung-Hoon Er,Seoung-Ho Lee 한양대학교 세라믹연구소 2005 Journal of Ceramic Processing Research Vol.6 No.1
Poly-Si1-xGex films were prepared on thermally oxidized Si(100) wafers using two step deposition (550 oC, 400Pa + 600 oC, 400Pa) by rapid thermal chemical vapor deposition. The deposited films were subjected to in-situ annealing and Ar/H2 plasma treated. The changes to the surface roughness, the grain size, and the electrical resistivity were investigated. The surface roughness was improved greatly by two step deposition whereas the grain size was slightly decreased. By in-situ annealing, the grain size increased up to 170 nm. Both the rms value and the resistivity decreased during Ar/H2 plasma treatment and were influenced by the surface etching effect of Ar ions and the hydrogenation effect, respectively.
鐵鋼 및 알루미늄材料의 機械的 性質에 미치는 TMT(thermomechanical treatment)의 影響
蘇明基 江原大學校 産業科學硏究所 1981 産業技術硏究 Vol.1 No.-
A study has been performed on the effect of TMT(thermomechanical treatment) on the mechanical properties of steel and aluminum alloys. Improvement of the mechanical properties on steel by HTMT is due to refinement of prior austenite grain size, martensite lath size and the distribution of ine carbide precipitates and on aluminum alloy by ITMT is due to grain size refinement, homogeneous distribution of small second phase particles and retardation of the recrystallization.
蘇明基,南寅卓 강원대학교 산업기술연구소 1984 産業技術硏究 Vol.4 No.-
Deposits of SiC has been formed by a chemical vapor deposition technique involving the application of gaseous mixture of Ch₃SiCl₃(MTS) and H₂ onto graphite substrate. These are no-fluid bed deposits prepared in an induction-heated reactor. From the experimental results, the deposition reaction of SiC is controlled by surface reaction mechanism at the temperature range between 1,100℃ and 1,400℃. The morphology of the SiC deposits changes from amorphous type to coarse, faceted structure as temperature increase.
蘇明基 江原大學校 産業技術硏究所 1986 産業技術硏究 Vol.6 No.-
The effect of supersaturation on morphology of silicon carbide by chemical vapor deposition using CH3SiCl3-H2 gas mixture system was investigated. The experimental results show that the final structure of silicon carbide deposits is coaresr as total pressure increases or α-ratio decreases. It is believed because supersataration of Si-source decreases as total pressure increases or α-ratio decreases.
蘇明基 江原大學校 産業技術硏究所 1985 産業技術硏究 Vol.5 No.-
Thermodynamic calculation for the CVD of SiC from methyltrichlorosilane(MTS) was done in some range of deposition condition to identify optimum condition. The results show that the most considerable chemical species are chloride and chlorosilane for silican source and methane and acetylene for carbon source. In order to yield single pahse β-SiC it is believed that optimum temperature range is between 1500 and 1700˚k. With increasing temperature, stable phase is changed from Si+SiC phase to C+SiC phase. It is believed because equilibrium concentration of silicon source decrease and equilibrium concentration of carbon source increases with increasing temperature.
급열처리가 AISI H13 열간성형용 공구강의 기계적 성질에 미치는 효과
소명기,천성순 대한금속재료학회(대한금속학회) 1980 대한금속·재료학회지 Vol.18 No.4
AISI H13 열간성형용 공구강의 기계적성질, 특히 강도와 인성을 향상시키기 위하여 급열처리를 적용하였다. 연구결과에 의하면 급열처리는 종래의 열처리 경우보다 항복강도는 10.7%, 인장강도는 12.6% 증가하였으며 파괴인성(Kc)의 값은 거의 변화가 없었다. 급열처리의 최적조건은 heating rate을 21.8℃/sec로 하여 austenitizing temperature에서 60sec 유지한 경우이다. 이와 같이 기계적성질의 향상, 특히 강도적 증가는 lath martensite 기지내에 석출된 미세한 탄화물의 분산강화에 의한 것으로 생각된다. Rapid heat treatment has been applied to AISI H13 hot work tool steel for improving the mechanical properties, especially strength and toughness. Experimental result showed that the yield strength was increased by 10.7%, the ultimate tensile strength was increased by 12.6% and fracture toughness (Kc) values were maintained same level to compare with conventional heat treatment. It was found that the best rapid heat treatment condition was that heating rate was 21.8℃/sec, holding time was 60 sec at austenitizing temperature. It is believed that the improvement of mechanical properties, especially strength, was due to the dispersion strengthening of fine carbides precipitates within the lath martensite matrix.
소명기 江原大學校 産業技術硏究所 2004 産業技術硏究 Vol.24 No.B
GaAs thin films were grown epitaxially by MOCVD method on (001) GaAs substrate. And as a surfactant, Bi(bismuth) thin films were deposited on GaAs buffer layer by using TMBi(trimethylbismuth) source. In-situ reflectance difference spectroscopy(RDS) was used to monitor the surface reconstruction of GaAs and Bi thin films. As the results, under the exposure of TBAs(tertiarybuthylarsine) and hydrogen atmosphere, the surface reconstruction of GaAs was changed from As-rich c(4x4) to As-rich (2x4), which was due to the adsoption and desorption of As dimers. The first bismuth surface related RDS signal was reported. At the deposition temperature of 450℃, Bi-terminated GaAs surface showed the RDS spectrum similar to that of Sb-terminated GaAs surface, possibly a (2x4) surface. And Bi surface layers were rapidly evaporated with increasing the deposition temperature(550℃), finally becoming As-terminated (2x4) surface.
RTMOCVD법에 의해 제조된 Ta₂O(5) 박막의 특성
소명기,Kwong, D.L 江原大學校 産業技術硏究所 1999 産業技術硏究 Vol.19 No.-
Ultra thin Ta₂O5 gate dielectrics were prepared by RTMOCVD (rapid thermal metal organic chemical vapor deposition) using Ta source TaC12H30O5N and O₂ gaseous mixtures. As a result, Ta₂O5 thin films showed significantly low leakage current compared to SiO₂ of identical thickness, which was due to the stabilization of the interfacial layer by NO (SiOxNy) passivation layer. The conduction of leakage current in Ta₂O5 thin films was described by the hopping mechanism of Poole-Frenkel (PF) type.