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In this study, the electron behavior was investigated numerically in order to obtain guidelines for design and operation of a new plasma source by a magnetic neutral loop discharge (NLD). The optimum plasma production was investigated by using a 3-dimensional simulation model which enables the electron behavior calculation from source region to downstream region. The results showed that the high-density plasma produced around the magnetic neutral loop (NL) is transferred from the NL region to the downstream region along magnetic force lines. Also the avaraged electron energy is increased with the normalized RF electric field (F), which can be used to characterize the plasma production efficiency of NLD system. Considering the relation between F and plasma production, in-depth plasma control can be achieved at a given specific process condition.
In this work, we reported fabrication of sealing the glass substrate using laser treatment at low temperature for electrochemical luminescence (ECL) cell. The laser treatment at temperature is using laser diode. The glass substrate sealing by laser treatment tested at 3-10W, 2-5 mm/s for build and tested. The sealing laser treatment method will allow associate coordination between the two glass substrate was enclosed. The effect of laser treatment to sealing the glass substrate was found to have cracks and air gap at best thickness of about 550-600 im for condition 3 W, 3 mm/s. The surface of sealing was roughness which was not influent to electrodes It can reduce the cracks, crevices and air gaps as well, improves the performance viscosity in butter bus bar electrodes. Therefore, it is more effective viscosity between two FTO glasses substrate.
Transparent conductive metal oxide films of In<SUB>2-x</SUB>Ti<SUB>x</SUB>O₃ (ITiO) and In<SUB>2-x</SUB>Sn<SUB>x</SUB>O₃ (ITO) were deposited by RF magnetron sputtering at substrate temperature of 300℃ and at high rate (~10㎚/min). Electrical and optical properties of the films were investigated as well as film structure and morphology, as it is compared with the commercial F:SnO₂ (FTO) glass. Near infrared ray transmittance of ITiO is the highest for wavelengths over 1000㎚, which can increase dye sensitized compared to ITiO and FTO. Dye-sensitized solar cells (DSCs) were fabricated using the ITiO, ITO and FTO. Photoconversion efficiency (?) of DSC using ITiO is 5.5%. whereas 5.0% is obtained from DSC with ITO. both at 100 ㎽/㎠ light intensity.
Ti-layer was deposited onto TiO₂ nanopartcles layer by RF magnetron sputtering in 500㎚ thickness. The transparent conductive oxide (TCO) layer was replaced by the high porosity Ti thin film. Thus TCO-less dye-sensitized solar cells (DSCs) sample was fabricated. The porous Ti layer with high conductivity can collect electrons from the TiO₂ layer and allows the ionic diffusion of I?/I₃?to the dye molecules through the holes in Ti thin film. The effeciency of as-fabricated TCO-less DSCs is 3.73% (Voc:0.68V, Jsc:9.61mA/㎠. FF:0.58).