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트랩 주입의 구조적 설계에 따른 LIGBT의 전기적 특성 개선에 관한 연구
강이구,추교혁,김상식,성만영,Gang, Lee-Gu,Chu, Gyo-Hyeok,Kim, Sang-Sik,Seong, Man-Yeong 대한전기학회 2000 전기학회논문지C Vol.54 No.12
In this paper, the new LIGBT structures with trap injection are proposed to improve switching characteristics of the conventional SOI LIGBT. The Simulations are performed in order to investigate the effects of the positiion, whidth and concentration of trap injection region with a reduced minority carrier lifetime using 2D device simulator MEDICI. Their electrical characteristics are analyzed and the optimum design parameters are extracted. As a result of simulation, the turn off time for the model A with the trap injection is $0.78\mus$. These results indicate the improvement of about 2 times compared with the conventional SOI LIGBT because trap injection prevents minority carriers which is stored in the n-drift region during turn off switching. The latching current is $1.5\times10^{-4}A/\mum$ and forward blocking voltage is 168V which are superior to those of conventional structure. It is shown that the trap injection is very effective to reduce the turn off time with a little increasing of on-state voltage drop if its design and process parameters are optimized.
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