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서태윤,이상현,송오성,Seo, Tae-Yune,Lee, Sang-Hyun,Song, Oh-Sung 한국재료학회 2002 한국재료학회지 Vol.12 No.10
It is of importance to know that the bonding strength and interfacial stress of SOI wafer pairs to meet with mechanical and thermal stresses during process. We fabricated Si/2000$\AA$-SiO$_2$ ∥ 2000$\AA$-SiO$_2$/Si SOI wafer pairs with electric furnace annealing, rapid thermal annealing (RTA), and fast linear annealing (FLA), respectively, by varying the annealing temperatures at a given annealing process. Bonding strength and interfacial stress were measured by a razor blade crack opening method and a laser curvature characterization method, respectively. All the annealing process induced the tensile thermal stresses. Electrical furnace annealing achieved the maximum bonding strength at $1000^{\circ}C$-2 hr anneal, while it produced constant thermal tensile stress by $1000^{\circ}C$. RTA showed very small bonding strength due to premating failure during annealing. FLA showed enough bonding strength at $500^{\circ}C$, however large thermal tensile stress were induced. We confirmed that premated wafer pairs should have appropriate compressive interfacial stress to compensate the thermal tensile stress during a given annealing process.
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Wiener-Hopf Technique와 Fourier Transform Analysis를 이용한 병렬 슬릿의 TE파 산란 해석
서태윤(Tae-Yoon Seo),안성환(Sung-Hwan Ahn),이재욱(Jae-Wook Lee),조춘식(Choon Sik Cho) 한국전자파학회 2008 한국전자파학회논문지 Vol.19 No.9
본 논문에서는 Fourier-transform analysis와 Wiener-Hopf technique을 사용하여 병렬 슬릿에 의한 TE파 산란의 완전한 표현식을 유도하고 두 방법의 특징을 비교하고자 한다. Fourier transform analysis는 슬릿의 폭이 좁은 경우에는 빠른 수렴해를 얻을 수 있으며, Wiener-Hopf technique은 슬릿의 폭이 넓을 경우(상호 유도 결합이 적은 경우)에 매우 정확한 근사식 결과를 나타내며, 위의 두 해석 결과는 비교적 일치하는 결과들을 보여준다. In this paper, an analysis of TE-wave scattering from transversal-shifted tandem slits using fourier transform analysis and Wiener-Hopf technique are derived and the electrical performances have been compared with a commercially availabel software. In Fourier transform analysis, it is shown that a fast-convergent series solution can be obtained when the distance between the slits is very narrow, while in Wiener-Hopf technique, it is found that the highly-accurate approximation can be obtained when the gap between the slits becomes wider. In addition, this paper has dealt with a good agreement between two analytical solutions.
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기판 집적 도파관 기술을 이용한 위성 통신용 4분기 전력 분배기
서태윤(Tae-Yoon Seo),이재욱(Jae-Wook Lee),이택경(Taek-Kyung Lee),조춘식(Choon Sik Cho) 한국전자파학회 2009 한국전자파학회논문지 Vol.20 No.8
본 논문에서는 기판 집적 도파관(Substrate Integrated Waveguide: SIW) 기술을 이용한 위성통신용 전력 분배기를 제안하였다. 출력 구형 도파관의 크기를 변화시키지 않고, 가이딩 포스트의 위치를 조절하여 등분 비등분의 전력 분배 비율을 조절하였다. 또한, 방사형 도파관의 기본적인 특성과 입력부, 전력 분배의 과정을 자세히 설명하였다. 방사형 도파관의 신호 여기 방법으로 전류 프로브를 사용하여 동축 케이블로 구현하였으며, 출력부는 마이크로스트립 선로를 천이 구조를 이용하여 SMA 커넥터를 이용하였다. 설계된 4분기 전력 분배기는 등분/비등분으로 동작할 수 있으며, 설계 결과를 시뮬레이션과 제작으로 검증하였다. 등분/비등분 전력 분배기의 측정된 결과는 VSWR 2:1을 기준 대역폭이 약 2.1 ㎓와 3 ㎓이다. Equal/unequal 4-way power divider suitable for satellite communication using SIW technology is presented in this paper. The control of positions of guiding posts provides equal or unequal power division ratios by maintaining the width of the SIW unchanged. In addition, the detailed descriptions for the proposed power divider include the general characteristics of radial waveguide, feeding part using coaxial cable, simple SIW structure, power-guiding posts, and transition for measurement. The comparison between the simulated and measured data shows a good agreement at a center frequency of 10 ㎓. The measured input impedance bandwidths for equal and unequal power divisions are about 2.1 ㎓ and 3 ㎓ under the condition of less than VSWR 2:1, respectively.
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서태윤(Seo Tae-Yoon),이옥진(Lee Ok-Jin),홍승분(Hong Seung-Bun) 한국체육과학회 2010 한국체육과학회지 Vol.19 No.4
The purpose of this study was to have a analysis trends of domestic studies on psychological skills or psychological skills training(PST) in sport and to provide meaningful informations for this research area in the future. This study reviewed total 47 studies on sport psychological skills or psychological skills training(PST), which were published in journals authorized by National Research Foundation of Korea(NRFK) from 2000 to 2010. The results were as follows. 1) In terms of sport events, most of studies have focused on individual and parallel sport. There were few studies for team sport. 2) In terms of research theme, most of studies were conducted for development and effects of psychological skills training(PST). 3) In intervention programs of psychological skills training(PST), most of studies have biased on individual sport. There were many studies on goal setting, imagery, and routine. How to measure psychological skills have utilized self-reported scale, such as Competitive Sport Anxiety Inventory-2(CSAI-2), Sport Competitive Anxiety Test(SCAT), and Athletic Coping Skills Inventory-28(ACSI-28). Most of studies have adopted both quantitative research method such as performance tests and self-reported inventory and qualitative research method such as interview and open-ended questionaries.
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전기로를 이용한 Si || SiO<sub>2</sub>/Si<sub>3</sub>N<sub>4</sub> || Si 이종기판쌍의 직접접합
이상현,이상돈,서태윤,송오성,Lee, Sang-Hyeon,Lee, Sang-Don,Seo, Tae-Yun,Song, O-Seong 한국재료학회 2002 한국재료학회지 Vol.12 No.2
We investigated the possibility of direct bonding of the Si ∥SiO$_2$/Si$_3$N$_4$∥Si wafers for Oxide-Nitride-Oxide(ONO) gate oxide applications. 10cm-diameter 2000$\AA$-thick thermal oxide/Si(100) and 500$\AA$-Si$_3$N$_4$LPCVD/Si (100) wafers were prepared, and wet cleaned to activate the surface as hydrophilic and hydrophobic states, respectively. Cleaned wafers were premated wish facing the mirror planes by a specially designed aligner in class-100 clean room immediately. Premated wafer pairs were annealed by an electric furnace at the temperatures of 400, 600, 800, 1000, and 120$0^{\circ}C$ for 2hours, respectively. Direct bonded wafer pairs were characterized the bond area with a infrared(IR) analyzer, and measured the bonding interface energy by a razor blade crack opening method. We confirmed that the bond interface energy became 2,344mJ/$\m^2$ when annealing temperature reached 100$0^{\circ}C$, which were comparable with the interface energy of homeogenous wafer pairs of Si/Si.
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