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슬라이더 LPE 법에 의한 Hg0.3Cd0.7Te 박막의 제조
서상희,김진상,류한일 대한금속재료학회(대한금속학회) 1989 대한금속·재료학회지 Vol.27 No.2
Hg_(0.3)Cd_(0.7)Te epi layers were grown by a slider liquid phase epitaxial growth process with using ramp cooling. A new slider boat was designed to keep the composition of the Te-rech growth solution from changing during growth. It was possible to grow Hg_(0.3)Cd_(0.7)Te epi layers with uniform composition in the thickness direction. The temperature at which CdTe substrate is contacted with the growth solution should be 1∼2℃ higher than the liquidus temperature in order to obtain the surface morphology with uniform terraces.
Hg-annealing 온도가 LPE 법으로 성장시킨 Hg0.8Cd0.2Te 의 전기적 특성에 미치는 영향
김재묵,서상희,문성욱,최종술,정용택 대한금속재료학회(대한금속학회) 1990 대한금속·재료학회지 Vol.28 No.6
Hg_(0.8)Cd_(0.2)Te epitaxial layers were grown by an LPE(liquid phase epitaxy) process. As-grown Hg_(0.8)Cd_(0.2)Te showed p-type conductivity with a carrier concentration of 8.8×10^(17)㎝^(-3). Annealings of as-grown Hg_(0.8)Cd_(0.2)Te wafers in Hg-atmosphere were performed over the temperature range 200 to 430℃. Annealings below 300℃ resulted in n-type conductivity with carrier concentrations from 10^14 to 10^15 cm^-3 and showed a maximum value at about 260℃. p→in type conversion temperature is thought to be determined by Hg-interstitials rather than residual donor impurities. The phase boundary of Hg_(0.8)Cd_(0.2)Te on the metal-rich side could be obtained.
(111) CdTe 기판의 이탈방위각이 LPE 법으로 성장시킨 Hg0.7Cd0.3Te 박막의 표면 형상에 미치는 영향
김재묵,서상희,임성욱,최인훈,곽로정 대한금속재료학회(대한금속학회) 1991 대한금속·재료학회지 Vol.29 No.1
Hg_(0.7)Cd_(0.3)Te epilayers were grown by a silder-type LPE(liquid phase epitaxy) technique using Te-rich growth solution. CdTe substrates of (111)Cd orientation with various degrees of misorientation were prepared by vertical Bridgman crystal growth and subsequent chemo-mechanical polishing processes. Epi-layers, which were grown using a substrate with 1^0 misoriented toward four different directions, showed a typical terrace morphology with terrace fronts perpendicular to the misorientation directions. As the misoriented angle increases, the terrace width decreases, while the terrace height increases. With the misorientation larger than 2^0, the terrace structure begins to disappear transforming into a wave-like surface. The initial stage of the epi-layer growth is thought to be governed by the so-called step bunching process. Dislocations begin to play a major role in the growth process when the terrace becomes as wide as 10 to 30㎛. Epi-layers were examined by Nomarski differential interference contrast optical microscope and stylus
Hgo07Cd0.3Te 박막의 LPE 성장시 성장시간에 따른 표면형상의 변화
김재묵,송원준,서상희,임성욱,최인훈,문성욱 대한금속재료학회(대한금속학회) 1990 대한금속·재료학회지 Vol.28 No.2
HgCdTe is the most widely used material for infrared photodetectors. HgCdTe epi-layers were grown on CdTe substrates with (111) orientation, using a slider LPE(Liquid Phase Epitaxy) technique. The change of surface morphology during LPE growth of Hg_(0.7)Cd_(0.3)Te was investigated. The wave-like surface at the initial stage of growth has transformed gradually to the terrace-like surface and the terrace width has increased with increasing growth time. Infrared tansmission was used to determine the composition of HgCdTe epi-layers.
수직 Bridgman 법에 의한 CdTe 단결정 성장시 성장속도가 전위 밀도와 분포에 미치는 영향
김재묵,송원준,서상희,임성욱,최인훈 대한금속재료학회(대한금속학회) 1988 대한금속·재료학회지 Vol.26 No.8
CdTe single crystals were grown by a vertical Bridgman method. The growth rate was varied between 1.1 and 5.4 ㎜/hr with maintaining the temperature gradient of 16℃/㎝ at the solid-liquid interface. Etch-pit structures of CdTe single crystals were investigated. The dislocation density was larger and the subgrain size was smaller at the surface and bottom of the crystal. With the increasing growth rate, the dislocation density gets larger and the subgrain size becomes smaller The thermal stress, which is supposed to build up during the solidification process, can explain our results.