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적층형 마이크로파 소자용 $BiNbO_4$ 유전체 세라믹스의 유전특성
박정흠,장낙원,윤광희,최형욱,박창엽 한국전기전자재료학회 1996 電氣電子材料學會誌 Vol.9 No.9
We have investigated dielectric properties of low fired ceramics BiNbO$_{4}$ containing 0.05[wt%] V$_{2}$O$_{5}$ and x[wt%l Cr$_{2}$O$_{3}$ (x=0, 0.2, 0.4, 0.8, 1.2). By substituting Cr for Bi, dielectric constant .epsilon.$_{r}$ and quality factor Q.f increased and temperature coefficient of resonant frecquency .tau.$_{f}$ changed to positive value. In the composition of BiNbO$_{4}$+0.05 [Wt%] V$_{2}$O$_{5}$+0.8[wt%]Cr$_{2}$O$_{3}$ sintered at 960[.deg. C], we could obtain microwave dielectric properties of .epsilon.$_{r}$=49, Q.f.simeq.3000[GHz](at 4.8[GHz]), .tau.$_{f}$.simeq.0[ppm/.deg. C]. As the above ceramics can be sintered near 960[.deg. C], it is applicable to multilayer microwave device with Ag conductor.tor.tor.tor.
레이저 어블레이션에 의한 (Pb,La)$TiO_3$박막의 제작조건에 따른 특성
박정흠,박용욱,마석범 한국전기전자재료학회 2001 전기전자재료학회논문지 Vol.14 No.12
In this study, high dielectric materials, (Pb,La)Ti $O_3$ thin films were fabricated by PLD (Pulsed Laser Deposition) method and investigated in terms of structural and electrical characteristics in order to develope the dielectric materials for the use of new capacitor layers of Giga bit-level DRAM. The deposition conditions were examined in order to fabricate uniform thin films through systematic changes of oxygen pressures and substrate temperature. The uniform thickness and smooth morphology of (P $b_{0.72}$L $a_{0.28}$)Ti $O_3$ thin films were obtained at the conditions of substrate-target distance 5.5[cm], laser energy density 2.1[J/$\textrm{cm}^2$], oxygen pressure 200[mTorr] and substrate temperature 500[$^{\circ}C$]. After the (P $b_{0.72}$L $a_{0.28}$)Ti $O_3$ thin films were fabricated under the above conditions, they were post-annealed by RTA process in order to increase the dielectric constant. The film thickness of 1200 [$\AA$] had dielectric constant 821. Assuming that operating voltage is 2V, leakage current density of (P $b_{0.72}$L $a_{0.28}$)Ti $O_3$ thin films would result into 10$^{-7}$ [A/$\textrm{cm}^2$] and satisfied the specification of 256M DRAM planar capacitor, 4$\times$10$^{-7}$ [A/$\textrm{cm}^2$]m}^2$]
재귀원형군과 하이퍼큐브의 고장 감내에 대한 결정적 척도
박정흠,김희철 한국정보과학회 2002 정보과학회논문지 : 시스템 및 이론 Vol.29 No.10
The connectivity and edge-connectivity have been the prime deterministic measure of fault tolerance in multicomputer networks. These parameters have a problem that they do not differentiate the different types of disconnected graphs which result from removing the disconnecting vertices or disconnecting edges. To compensate for this shortcoming, one can utilize generalized measures of connectedness such as superconnectivity, toughness, scattering number, vertex-integrity, binding number, and restricted connectivity. In this paper, we analyze such deterministic measures of fault tolerance in recursive circulants and hypercubes, and compare them in terms of fault tolerance. 다중 컴퓨터 네트워크의 고장 감내에 대한 대표적인 결정적 척도로 연결도와 에지 연결도가 있다. 연결도나 에지 연결도는 어떤 정점 분리 집합이나 에지 분리 집합을 제거했을 때 남은 그래프의 형태를 고려하지 않는다는 문제가 있다. 이러한 단점을 보완하기 위해서 superconnectivity, toughness, scattering number, vertex-integrity, binding number, restricted connectivity와 같은 일반화된 연결성 척도들이 함께 사용된다. 이 논문에서는 재귀원형군과 하이퍼큐브의 고장 감내에 대한 이러한 결정적 척도를 분석하고, 고장 감내 측면에서 비교한다.
박정흠 가톨릭대학교 자연과학연구소 1999 자연과학논문집 Vol.20 No.-
이 논문은 정점이나 에지를 제거하였을 때 재귀원형군 G(2^(m), 4)의 해밀톤 성질을 그래프 이론적 관점에서 고찰한다. 재귀원형군은 [14]에서 제안된 다중 컴퓨터의 연결망 구조이다. G(2^(m), 4)는 m―2-fault 해밀톤 그래프이며 또한 m―3-fault 해밀톤 연결된 그래프임을 증명한다. In this paper, we investigate hamiltonian properties of recursive circulant G(2^(m), 4) in the presence of vertex and edge faults from the graph theory point of view. Recursive circulant is an interconnection structure for multi-computer networks proposed in [14]. We show that G(2^(m), 4) is an m―2-fault hamiltonian graph and is an m―3-fault hamiltonian-connected graph.
레이저 어블레이션에 의한 $(Pb,La)TiO_3$ 박막의 제작
박정흠,김준한,이상렬,박종우,박창엽,Park, Jeong-Heum,Kim, Joon-Han,Lee, Sang-Yeol,Park, Chong-Woo,Park, Chang-Yub 한국전기전자재료학회 1998 전기전자재료학회논문지 Vol.11 No.2
$(Pb_{0.72}La_{0.28})Ti_{0.93}O_3(PLT(28))$ thin films were fabricated by pulsed laser deposition. PLT films deposited on $Pt/Ti/SiO_2/Si$ at $600^{\circ}C$ had a preferred orientation in (111) plane and at $550^{\circ}C$ had a (100) preferred orientation. We found that (111) preferred oriented films had well grown normal to substrate surface. This PLT(28) thin films of $1{\mu}m$ thickness had dielectric properties of ${\varepsilon}_r$=1300, dielectric $loss{\fallingdotseq}0.03 $. and had charge storage density of 10 [${\mu}C/cm^2$] and leakage current density of less than $10^{-6}[A/cm^2]$ at 100[kV/cm]. These results indicated that the PLT(28) thin films fabricated by pulsed laser deposition are suitable for DRAM capacitor application.
PLD법에 의한 14/50/50 PLZT박막의 제작과 특성평가
박정흠,강종윤,장낙원,박용욱,최형욱,마석범 한국전기전자재료학회 2001 전기전자재료학회논문지 Vol.14 No.5
The needs of new materials that substitute Si Oxide capacitor layer in high density DRAM increase. So in this paper, we choose the slim region 14/50/50 PLZT composition and fabricated thin films by PLD and estimated the characteristics for DRAM application. 14/50/50 PLZT thin films have crystallized into perovskite structure in the $600^{\circ}C$ deposition temperature and 200 mTorr Oxygen pressure. In this condition, PLZT thin films had 985 dielectric constant, storage charge density 8.17 $\mu$C/$\textrm{cm}^2$ and charging time 0.20ns. Leakage Current density was less than 10$^{-10}$ A/$\textrm{cm}^2$ until 5V bias voltage.