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ULSI용 Electroplating Cu 박막의 미세조직 연구
박윤창(Yun-Chang Park),송세안(Se Ahn Song),윤중림(Jung-Lim Yoon),김영욱(Young-Wug Kim) 한국진공학회(ASCT) 2000 Applied Science and Convergence Technology Vol.9 No.3
electroplating(EP)법을 이용하여 ULSI용 Cu 박막을 제조하였다. seed Cu는 sputtering으로 증착 하였으며, 확산방지막으로 TaN를 사용하였다. 제작된 EP Cu 박막은 seed Cu의 영향으로 열처리 조건에 관계없이 Cu(111) 방향으로 강하게 우선 배향 하였다. 열처리 온도와 시간이 증가함에 따라 Cu 박막의 미세조직이 non-columnar structure에서 약 2배 이상 결정립 성장하여 columnar structure로 바뀌었으며, 또한 as-deposit시 관찰되었던 stacking fault, twin, dislocation 들이 상당히 줄어드는 것이 관찰되었다. Cu의 확산에 의하여 생기는 copper-silicide는 관찰할 수 없었으며, 이것은 두께 45㎚의 TaN막이 450℃, 30분 열처리시 확산방지막으로 충분한 역할을 한 것으로 판단된다. Cu(111) 우선 배향과 열처리에 의한 결정립 성장 및 defect 감소는 Cu 박막의 결정립계에서 발생하는 electromigration 현상을 상당히 줄일 수 있을 것으로 판단된다. Electroplating Cu was deposited on Si(100) wafer after seed Cu was deposited by sputtering first. TaN was deposited as a diffusion barrier before depositing the seed Cu. Electroplating Cu thin films show highly (111)-oriented microstructure for both before and after annealing at 450℃ for 30min and no copper silicide was detected in the same samples, which indicates that TaN barrier layer blocks well the Cu diffusion into silicon substrate. After annealing the electroplating Cu film up to 450℃, the Cu film became columnar from non-columnar, its grain size became larger about two times, and also defects density of stacking faults, twins and dislocations decreased greatly. Thus the heat treatment will improve significantly electromigration property caused by the grain boundary in the Cu thin films.
Transparent conductive oxide layers-embedding heterojunction Si solar cells
윤주형(Yun, Ju-Hyung),김민건(Kim, Mingeun),박윤창(Park, Yun Chang),김준동(Kim, Joondong),Anderson, Wayne A. 한국신재생에너지학회 2011 한국신재생에너지학회 학술대회논문집 Vol.2011 No.11
High-efficient transparent conductive oxide (TCO) film-embedding Si heterojunction solar cells were fabricated. An improved crystalline indium-tin-oxide (ITO) film was grown on an Al-doped ZnO (AZO) template upon hetero-epitaxial growth. This double TCO-layered Si solar cell provided significantly enhanced efficiency of 9.23 % as compared to the single TCO/Si devices. The effective arrangement of TCO films (ITO/AZO) provides a good interface, resulting in the enhanced photovoltaic performances. It discusses TCO film arrangement scheme for efficient TCO-layered heterojunction solar cells.
Metal-Oxide-Semiconductor 광전소자
강길모,윤주형,박윤창,김준동,Kang, Kilmo,Yun, Ju-Hyung,Park, Yun Chang,Kim, Joondong 한국전기전자재료학회 2014 전기전자재료학회논문지 Vol.27 No.5
A high-responsive Schottky device has been achieved by forming a thin metal deposition on a Si substrate. Two-different metals of Ni and Ag were used as a Schottky metal contact with a thickness about 10 nm. The barrier height formation between metal and Si determines the rectifying current profiles. Ag-embedding Schottky device gave an extremely high response of 17,881 at a wavelength of 900 nm. An efficient design of Schottky device may applied for photoelectric devices, including photodetectors and solar cells.