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박애주 숙명여자대학교 학생위원회 1982 淑大學報 Vol.22 No.-
대학이란 보수적 풍토가 가장 짙은 조직체 중의 하나일 것이다.그러기에 큰 화없이 서서히 변모해 가도 누가 크게 탓하지 않는 것이 대학이기도 하다.그러나 해방전에 몇개 안되던 대학(또는 전진인 전문학교)들의 당시의 모습과 지금을 비교해 보면 놀랄만큼 차등이 생길 것은 물론이거니와 우리 숙명보다 휠씬 늦게 시작한 지금의 대학들의 발전상을 살펴보면 다시 한번 놀라지 않을 수 없을 것이다.구태여 여기서 그 이유를 따지고 싶은 마음은 물론 없다.그러나 이들 대학들은 예외없이 학교 부지가 적으면 강력히 확장하거나 장소를 옮기는 등 큰 용단이 필요하면 과감히 결단을 내리고 외면으로나 내용면에서 몇차례의 개혁에 파생되는 고통을 참고 감행하여 오늘에 이르렀다는 점을 지적하고 싶다.우리 숙명도 이제는 그 무엇인가를 해야 할 시기가 아닌가 생각된다.일을 하려면 일부에서는 반드시 비판의 소리가 따르기 마련이고 장해물이 생기기 마련이다.그러나 옳은 일을 하면 떠들썩한 비판의 소리보다는 조용히 칭찬하는 소리의 수가 몇 배,몇 십 배 더 많다는 것을 나는 믿고 있다.끝으로 우리 숙명의 발전을 위한 그 무엇이 무언지를 다함께 진지하게 찾아 볼수 있게 되기를 바라마지 않는다.
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V_2O_5-As_2O_3-Na_2O-BaO系 유리半導體의 電氣的 特質에 관한 硏究
박애주,채인경 淑明女子大學校 1990 論文集 Vol.30 No.-
Glasses of V_2O_5-As_2O_3-Na_3O-BaO system varying concentration ratio of the compotents have been prepared and their electric propperties, such as, dc electric resistivity, dielectric constant and dielectric loss have been measured. Electric resistivity of the glasses are measured at the break temperature between 27℃ to 180℃ and are found to be decreasing as temperature and concentration of V_2O_5 increase. Plots of In ρ vs 1/T show two straight lines breaking at the break temperature and activation energies are calculated from these lines in the range of 0.322 eV∼0.505 eV for the low temperature region and 0.437 eV∼0.638 eV for the high temperature region, respectively. Dielectric constants of the glasses are found to be exponentially increasing as frequencies decrease. At a given frequency, the dielectric constant is larger for the higher temperature. The Dielectric losses of the glasses show turning points at a certain frequency. The turning points are shifted to the higher frequency when temperatures are increased. Dielectric characteristics of the glasses are observed to satisfy the Debye theory.
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V2O5-B2O3-Na2O系 유리半導體의 電氣的 性質에 관한 硏究
朴愛珠,이경미 숙명여자대학교 자연과학연구소 1989 자연과학논문집 Vol.- No.1
V2O5-B2O3-Na2O system glasses of varying V₂O₃ composition were prepared. The resistivity and the dielectric characteristic of these glasses were studied at various temperature from 20℃ to 180℃ with different frequency from 5×10⁴Hz to 107 Hz. The resistivity of the glasses were observed range from 107 to 10ⁿΩ-cm. In ρvs.10³/T was plotted, which gave linear relationship. The line showed the Arrhenius relation. The conductivity of the glasses were increased with V₂O₃ concentration and temperature were increased. The conduction is characterized as non-adiabatic small polaron hopping conduction. The dielectric constant showed decreasing exponentailly as frequency was increased. The tangent loss has a maximum point and this point showed a shifting toward the higher frequency when the temperature was raised.
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V_2O_5-P_2O_5-MnO_2系 유리半導體의 電氣的 特性에 關한 硏究
朴愛珠 淑明女子大學校 1984 論文集 Vol.25 No.-
V_2O_5-P_2O_5-MnO_2-(PVM) System glasses varing composition of V_2O_5 to P_2O_5 ratio have been prepared and then Specific resistance and current-voltage Characteristics have been measured at various temperatures from 21℃ to 253℃ and from 25℃ to 220℃, respectively. Their dielectric constants and dielectric loss have also been measured at room temperature with variation of frequency from 10^4HZ to 10^7HZ. Since glass is not formed when the composition of MnO_2 exceed 40% and resistance of a glass increases to infinite when MnO_2 exceedes 20%, measurements have been done for the samples in which MnO_2 contains at 10%. Specific resistances (ρ) of the glasses are values between 10^3 to 10^8 O-cm for the experimental temperature range and plot of log ρ VS 1/T shows good straight line. Activation energies of the PVM system glasses with 40% and 60% of V_2O_5 show switching phenomena and their critical voltage decrease as increasing temperature. In order to investigate valence state of the Vanadium in the glass samples, the glasses have been dissolved and analysed chemicaly at inert atmosphere and it is found that more V^4+ companing to V^5+ exists in the glasses as decreasing V_2O_5 addition and most of the added Mn^4+ present in the form of M^2+ ion. Specific resistances of the ratio of V^4+ against V^5+ and it can be assumed that hopping process occurs when conducting electron moves under electric field from low valance ion to high valence ion through oxygen bridge. Dielectric constant and dielectric loss of the glasses are found to be increasing as decreassing frequency and shows typical S-type variation which is presumably caused by migration loss of v^+ ion.
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朴愛珠,金斗姬,李章魯 淑明女子大學校 1980 論文集 Vol.20 No.-
Magnetic and mageto-optic properties of the ferromagnetic compound Mn_5Ni_2Bi_4 thin films are studied. The films are prepared by vacuum evaporation. Bi, Ni and Mn films are evaporated successively onto glass substrates at room temperature. The experimental conditions of the evaporatina process and thermal treatment of thin films of the Mn-Ni-Bi tennary system are examined. The specific conditions required are obtained to be more than ten hours of annealing at 350℃ in vacuum of 10^-5∼10^-6 Torr. The formation of compound Mn_5Ni_2Bi_4 films was confirmed by X-ray diffraction. The magnetic hysteresis loop of Mn_5Ni_2Bi_4 films of the thickness 800 A˘ measured by a magneto-optical method are rectangular, that is, the remnant magnetization equals the saturation magnetization. The magneto-optic Kerr effect of the films are inverstigated by measuring the rotation angle of the polarization and the ellipticity of the reflected light from the film surface using an ellipsometer. The state of polarization is analytically represented by using the poincare' sphere. The optical indices such as the refractive index, the index of absorption, the magneto-optic amplitude, its phase are obtained by analyzing the measured rotation angles and ellipticities in terms of the reflection coefficient derived by Voigt. The absorption coefficient, the figure of merit, the electric conductivity, and the electric polarizability are also calculated using the above quantities. The dependence of the magneto-optic constants upon the wave length of the light have also been investigated. The largest value of kerr rotation, magneto-optic amplitude and figure of merit obtained near the wave length 5000∼5200A˚are attributed to the resonance of the electric conductivity term and polarizability term of off-diagonal elements of the dielectric tensor. It is found that the center of the dispersion of magneto-optic constants is at the above region of the wave length showing that the magneto-optic transition occurs around this wave length. The figures of merit Mn_5Ni_2Bi_4 film are smaller than those of MnBi. The films are very resistant to oxidation by the surrounding atmosphere. The Mn_5Ni_2Bi_4 film seems promising as a magneto-optic memory medium
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