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알루미늄 산화물 절연막에 하프늄의 첨가가 자기터널접합의 특성에 미치는 영향
임우창(W. C. Lim),배지영(J. Y. Bae),이택동(T. D. Lee),박병국(B. G. Park) 한국자기학회 2004 한국자기학회지 Vol.14 No.1
We have investigated the effect of Hf insertion in the Al oxide tunnel barrier on the properties of magnetic tunnel junctions (MTJs). MTJs with Hf inserted barrier show the higher tunnel magnetoresistance (TMR) ratio and less temperature and bias voltage dependence of TMR than MTJs with a conventional Al₂O₃ barrier. The enhancement of TMR ratio and the reduction of the temperature and bias voltage dependence might be due to the reduction of defects in the barrier. Al-Hf oxide was formed by depositing Al and Hf simultaneously, and oxidizing the compound films. The TMR ratio of 36% was almost the same value as that with Hf inserted barrier. This implies that the inserted Hf layers mixed with Al layers during deposition or oxidation, and they might form Al Hf oxide barriers. This compound Al Hf oxide formation may be responsible to reduction of defect concentration which enhanced the TMR ratio and reduced temperature and bias-voltage dependence.
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