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FT-IR/ATR을 이용한 실리콘 웨이퍼 기판 위의 Polydimethylsiloxane의 분석 연구
류근걸,정용현,두향균,김석환 순천향대학교 부설 산업기술연구소 2014 순천향 산업기술연구소논문집 Vol.20 No.1
Since the polydimethylsiloxane material, as one of silicone polymers, has a very profound potential for its electronic applications, its concentration must be measured to very extremely low level accurately. In this study, it was investigated with FT-IR/ATR(Fourier Transformation of InfraRed Light/Attenuated Total Reflection). Polydimethylsiloxane emulsion, diluted, with deionized water, was applied onto the silicon wafer surface, dried and then measured with FT-IR/ATR. Dilution was observed and quantified below 0,1 ppm level with FT-IR/ATR. In conclusion, FT-IR/ATR was realized as one of best analytical measurements to quantify concentration down to very low levels of polydimethylsiloxane, and even as the very ease and convenient tool for it.
류근걸,김우혁,이윤배,이종권 한국반도체디스플레이기술학회 2003 한국반도체장비학회지 Vol.2 No.3
In the rapid changes of the semiconductor manufacturing technologies for early 21st century, it may be safely said that a kernel of terms is the size increase of Si wafer and the size decrease of semiconductor devices. As the size of Si wafers increases and semiconductor device is miniaturized, the units of cleaning processes increase. A present cleaning technology is based upon RCA cleaning which consumes vast chemicals and ultra pure water (UPW) and is the high temperature process. Therefore, this technology gives rise to environmental issue. To resolve this matter, candidates of advanced cleaning processes have been studied. One of them is to apply the electrolyzed water. In this work, electrolyzed water cleaning was compared with various chemical cleaning, using Si wafer surfaces by changing cleaning temperature and cleaning time, and especially, concentrating upon the contact angle. It was observed that contact angle on surface treated with Electrolyzed water cleaning was $4.4^{\circ}$ without RCA cleaning. Amine series additive of high pKa (negative logarithm of the acidity constant) was used to observe the property changes of cathode water.
류근걸,김우혁,김영근,이미영,이윤배 대한금속재료학회 2005 대한금속·재료학회지 Vol.43 No.2
Introducing the general MEMS (Micro Electro Mechanical System) technology to BioMEMS (Biological MEMS) field, PCR (Polymerase Chain Reaction) micro-device, which is for DNA multiplication and analysis, is designed and fabricated in this study. PCR micro-device is characteristic of the accurate reaction and temperature control, and the thermal uniformity. Silicon wafer suitable for these requirements was utilized for 20x20 mm²PCR micro-device fabrication. Gold film of 50 μm line width was developed to optimize the power of 200 Ω resistance heater. Reaction chamber of 8x8 mm²size was fabricated by chemical wet etch, together with a cooling line of 0.35 mm width which circulates the reaction chamber periphery twice. PDMS (Polydimethylsioxane) film was utilized to cover the reaction chamber and the cooling line. Computer simulation was carried out to predict the behavior of temperature changes in the fabricated PCR micro-device. Heating 60 seconds resulted in 84-88℃ temperature profile in the reaction chamber, and then 30 seconds cooling was enough to reach to 55℃. It was recognized that this condition was acceptable to PCR multiplication operation. (Received March 29, 2004)
대면적화된 마이크로파 플라즈마를 이용하여 실리콘 웨이퍼에 증착한 다결정 실리콘의 특성 연구
류근걸,Ryu, Geun-Geol 한국재료학회 1999 한국재료학회지 Vol.9 No.6
Semiconductor industry requires the development of new technology such as 300 mm technology, suitable for manufacturing the next generation dervices. A promising process for realizing 300 mm technology can be achieved by using enlarged microwave plasma chemical vapor deposition (MWCVD) technology. In this work, we used radial line slot antenna for enlarging microwave plasma area, and carried ut the deposition of polysilicon films using enlarged MWCVD for the first time in Korea. The results was as follows. Deposited polysilicon films showed various degrees of crystallinity as well as epitaxy to silicon substrates even at low temperature of $300^{\circ}C$. Deposition rates also controled crystallization behavior and slo deposition rates showed very high crystallinity. It could be said that enlarged MWCVD system and technology was worth to get attraction as one os future technologies for 1 G DRAM era.
류근걸 순천향대학교 부설 산업기술연구소 2004 순천향 산업기술연구소논문집 Vol.10 No.2
Porcelain coating has been paid attention to since teflon coating of DuPont on kitchen utensils was realized to develop the environmental issues, resulting in the announcement of its use restriction policy in August, 2004. However carbon steel substrate is believed to release hydrogen gas to the interface between porcelain coating powder to prevent the fish scale generation. Its price is very expensive so that the domestic production is essential for international superiority. In this work the additives were analyzed to review the possibility of domestic production, including fish scale analysis to understand its generation mechanism. Additives consisted of nickel oxide and silicon Oxide powders with no organic binders. Silicon oxide particle size was about about 10 um, while that of nickel oxide was less than 1 um. The original location of fish scale generation was spotted in the coating without additives. It was concluded that the additives could be produced domestically to substitute the imported foreign additives.
류근걸 순천향대학교 부설 산업기술연구소 2000 순천향 산업기술연구소논문집 Vol.6 No.2
A computational study was carried out on the fluid flows in semiconductor processes such as air in the cleanroom and water in the cleaning bath. Air flow was observed in terms of pressure and velocity changes, and it was realized that tables or process equipments might generate the turbulence air flow causing the stagnation of contaminants in the dead zone and the decrease of cleanness, Hence, it considered for the semiconductor yield improvement. Cleaning bath design changes, also, may result in various cleaning effects and therefore various yield variations. Introduction of computational study to semiconductor processes will give safe and economic decision criteria for feasibility of design and process developments of semiconductor fabrications.
류근걸 순천향대학교 부설 산업기술연구소 2004 순천향 산업기술연구소논문집 Vol.10 No.2
지난 10년 동안 디스플레이 및 반도체 분야의 RCA 세정은 높은 수준의 집적도와 환경적인 요구에 부응하기 위하여 집중적으로 연구 되어왔다. 본 연구에서는 RCA 세정을 대체할 전리수의 양극수를 이용하여 Pourbaix 개념을 바탕으로 입자와 유기오염물 그리고 금속을 세정하고자 하였다. 매개물로 MgO입자를 이용하여 새로운 세정 개념을 시험하고 증명하였다. 사용된 양극수의 pH는 3.0 이고, ORP(Oxidation Reduction Potential)는 900mV 이었다. 양극수에 의해 용해 세정되는 MgO의 양을 분석하기 위하여 MgO입자를 입힌 0.5mm두께의 유리판의 무게 감소를 측정하였다. 유리판 무게 1g~2g기준으로 MgO 무게가 100㎍~500㎍ 범위로 감소함을 확인하였다. 디스플레이 및 반도체 세정에서는 1E10에서 1E15 ea/cm^(2)범위의 오염 수준이 다루어지고 있기 때문에 양극수를 디스플레이 세정에 적용할 수있음을 알 수 있었다. 그리고 OH radical이 없기 때문에 표면의 micro roughness도 최소화 할 수 있으며, 나노 입자 세정을 위하여 매우 의미 있는 결과라 할 수 있다.