多色發光形 AC 薄膜電場發光素子

羅炳旭,李相潤,孫相豪,朴汶圭 慶北大學校 自然科學大學 1986 自然科學論文集 Vol.4 No.-

Multi-colored AC thin film electroluminescence devices have been fabricated by electron beam evaporation. The green and red light emission were observed and the emission brightness B were measured as the function of applied voltage V, frequency f and concentration of the rare-earth materials. The brightest emission was observed for the ZnS:TbF_3 devices and the value was 700f-L.

CdS-si Heterojunction의 전기적 및 광기전력 성질에 관한 연구

羅炳旭 慶北大學校 物理化學硏究所 1983 硏究論文集 Vol.4 No.-

CdS-Si heterojunctions were prepared by vacuum evaporation of CdS on Si single crystals, and their electrical and photovoltaic properties were studied. The junction prepared on the (111) surface of Si substrate showed good rectifying properties and the highest photovoltage was obtained for the junction prepared at temperature about 200℃ of the substrate. X-ray diffaction study has shown that the orientation of the polycrystallines of CdS film is mainly (111) plane which is parallel to the substrate. The best cell showed the following parameters: V_oc=0.5V, I_sc=22㎃/㎠, FF=0.6 and η=6.6% under AM 1 illumination.

CdTe단결정 성장

羅炳旭 慶北大學校 物理化學硏究所 1983 硏究論文集 Vol.4 No.-

CdTe single crystal is grown by Bridgman method, and its crystal structure and lattice constant are measured by X-ray diffrartion method and etch pit method. Some elestrical properties are measured by van der Pauw method. The typical value of the electrical resistivity and carrier mobility at room temperature are as follows; ρ=2.2×10 exp(3) - 3.5×10 exp(4)Ω-㎝, μ=35.5㎠/V-sec for undoped crystals, and ρ=2-4.1×10 exp(-2)Ω-㎝, μ=518㎠/V-sec for In doped crystals.

용액살포 방법에 의한 Zn_XCd_1-XS 박막의 특성조사

羅炳旭 慶北大學校 物理化學硏究所 1983 硏究論文集 Vol.4 No.-

Zn_xCd_(1-x)S thin films are fabricated by spraying a mixed solution of CdCl_2, N_2H_4CS and ZnCl_2 on heated glass plates. The thickness of these films are 2-5 ㎛, spray rates are 4-5 cc/min. The electric and optical properties of these films are measured as a function of Zn concentration and substrate temperature. The optimum condition for repairing Zn_xCd_(1-x)S films by solution spray technique is determined and it is found to depend upon the substrates temperature, spray rates, and starting material concentration. The film in hydrogen gas and in vacuum are investigated. The resistivities are decreased about 10^-3 times and the mobilities are increased after annealing in hydrogen gas. The carrier concentrations are almost invariable. The variation of spectral absorption edges are observed as Zn concentration varies, showing that the energy band gaps are increased as Zn concentration increase. Photoconducting gains are decreased as Zn concentration increase.

Ti/p-Si 太陽電池의 製作과 特性

羅炳旭,李相潤,孫鍊圭,金東洛 慶北大學校 物理化學硏究所 1984 硏究論文集 Vol.5 No.-

Titanium thin film was deposited on the chemically etched (100) surface of silicon single crystal by the vacuum evaporation. The interfacial oxide was grown by ramp heating. The Ti/p-Si solar cells have shown good rectification properties with the 0.78V built-in potential and the 20㎂/㎠ reverse saturation current density in dark. The best cell have 0.58V open circuit voltage, 38.0 ㎃/㎠ short circuit photocurrent density, 0.64 fill factor and 13.9% energy conversion efficiency under 100㎽/㎠ tungsten halogen lamp irradiation. Therefore, this solar cell is a very promising one, but the life testing is not performed yet in our laboratory.

액상애피택시법으로 성장시킨 Al_xGa_(1-x)As/GaAs LED

라병욱,이상윤 慶北大學校 自然科學大學 1986 自然科學論文集 Vol.4 No.-

Zn doped Al_χGa_1_χAs/GaAs light emitting diodes were fabricated by liquid phase epitaxial growing method. χ in Al_χGa_1_χAs layer was measured by EPMA. The electrical characteristics of p-n junction were studied by I-V and C-V measurements. The growth rate of Al_χGa_1_χAs layer by LPE was about 0.75㎛/min at 1℃/min of cooling rate. Emitting light was detected by I.R. Scope and PIN-diode. The emission specta of the LEDs showed that the wave length corrs??ponging to the maximum intensities were 9050 Å for Al_χGa_1_χAs(Te-doped)LED and 8900A for Al_x ga_1_xAs(Te-doped) -Zn diffused LED respectively.

ZnTe의 Memory-Switching 作用에 關한 硏究

羅炳旭,朴載燉 慶北大學校 1976 論文集 Vol.21 No.-

ZnTe Polycrystalline thin film may be obtained o glass substrates by vacuum evaporation method. The sandwich devices of Al-ZnTe-Al exhibited memory switching characteristics, which may be called "non-polarized memory effects". The characteristics were symmetric in the 1st and 3rd quadrants. The average resitance ratio was about 103. The ON-state was ohmic. The current-voltage characteristics in the OFF state showed the space-change limited behavior. The memory switching effect may be explained as follows; in the voltage region close to the threshold voltageVth, current constriction occurs, so that current flows in the filamentary path and causes switching from off to on, then the filamentary path is heated to some critical temperature and thermal rupture is created to bring out switching from ON to OFF.

Cr-Cu/p-Si MIS型 太陽電池의 製作 및 特性

羅炳旭,金奎用,李原鎭 慶北大學校 1981 論文集 Vol.31 No.-

Cr-Cu/p-Si MIS solar cells having about 1-㎠ area have been fabricated by sequential vacuum evaporation of Cr and Cu metals on the (111) surface of p-type Si single crystal with a thin interfacial layer of SiO_2. The spectral response measurements and the effects of the oxide layer thickness between Cr and Si-substrate were investigated. Also, The antireflection coating improves signifficantly the conversion efficiency of Cr-Cu/p-Si MIS solar cells. Under AM1 illumination of solar simulator, the parameters of the best cell obtained are open-circuit voltage V_oc=0.5V, short-circuit current I_sc=26㎃, fill factor FF=0.67 and conversion efficiency η=8.7%.

핵반응 H^3(d,n)He^4에 관한 연구

라병욱 慶北大學校 1971 論文集 Vol.15 No.-

The thin target yield of the reaction H^3+H^2→He^4+n^1+17.6MeV has been measured by using scintillation counting method, and the tritium target was the one absorbed on the copper backed zirconium film. Experiments have been conducted in the region 10KeV to 150 KeV incident deuteron energy, and the yield of the neutron was observed to rise rapidly at lower energy side, and the peak value around at 100KeV.

高效率 시리콘 太陽電池의 硏究 : Ti/p-Si, MIS Inversion and Heterojunction Type Solar Cells Fabricated by Bacuum Evaporation and Spray Pyrolysis Methods

羅炳旭,李相潤,朴德圭,李鍾德,禹洪,盧景錫 慶北大學校 物理化學硏究所 1982 硏究論文集 Vol.3 No.-

1. Ti/p-Si Solar cell Fabricated by Vacuum Evaporation Titanium thin film was deposited on the chemically etched (100) surface of silicon single crystal by the vacuum evaporation. The interfacial oxide was grown by ramp heating. The Ti/p-Si solar cells have shown good rectification properties with the 0.78 V built-in potential and the 20 ㎂/㎠ reverse saturation current density in dark. The best cell have 0.58 V open circuit voltage, 38.0 ㎃/㎠ short circuit photocurrent density 0.64 fill factor and 13.9 % energy conversion efficiency under 100 ㎽/㎠ tungsten halogen lamp irradiation. Therefore, this solar cell is a very promising one, but the life testing is not performed yet in out laboratory. 2. Al/p-Si Solar Cell with Fine Grid and Inversion Layer The fabrication procedure and properties of MIS inversion solar cells forming a fine grating pattern of aluminium evaporated onto p-type silicon single crystal are discribed. The finest grating line width achieved in these cells described here were about 30 ㎛, and the smallest spacings were about 120 ㎛. The proper temperature for oxide growing of these cells was found to be about 450℃ for 20 minutes with oxygen flow. Under 100 ㎽/㎠ of irradiation of sunlight and using the antireflective coating of tnataliumsilicafilm spun on these cells, the short circuit photocurrent density, open circuit voltage and energy conversion efficiency were 28.0 ㎃/㎠, 0.545 V and 11 % respectively. 3. Heterojunction Type Solar Cell In_2O_3: Sn and SnO_2 films were deposited on the (100) surface of silicon single crystal by the spray pyrolysis method. The properties of these cells have good rectification with open circuit voltage, the short circuit photocurrent density, fill factor and energy conversion efficiency of 0.52V, 39.3㎃/㎠, 0.63 and 12.9 %, for In_2O_3: Sn/n-Si heterojunction solar cell and of 0.45V, 35.5 ㎃/㎠, 10.2%, for SnO_2/n-Si cell, respectively.