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낮잠시간에 활용되는 자장곡에 대한보육교사의 인식과 실태
김호경,김영연 한국음악교육학회 2014 음악교육연구 Vol.43 No.1
본 연구의 목적은 어린이집 낮잠시간에 활용되는 자장곡에 대한 보육교사의 인식과 활용의 실태를 알아보는 것이다. B광역시 어린이집에 근무하는 보육교사 120명을 대상으로 자장곡의 개념과 필요성 및 활용의 효과 그리고 자장곡의 활용여부와 매체, 활용곡에 대하여 설문조사한 결과는 다음과 같다. 첫째, 보육교사가 생각하는 자장곡은 낮잠시간에 잠재우는데 반드시 필요한 것으로서 음악, 어르는 소리, 언어적 지시를 모두 포함하며 그 중 음악이 가장 효과적이라고 인식하였다. 둘째, 보육교사는 CD에 수록된 자장곡을 활용하면서도 음악 지식과 음원 정보의 미흡으로 인하여 자장가 선곡에 어려움이 있다고 밝혔다. 셋째, 활용되는 자장곡은 주로 서양고전 성악곡과 기악곡인데 그 중 상위 20위 선호곡은 다장조, 4/4박자, aa'a 형식의 느린 곡이었다. 이상의 결과는 어린이집에서 낮잠시간에 활용되는 자장곡이 잠재우기라는 단순한 기능 외에 영유아의 신체발달과 음악성 발달을 돕는 음악교육자료로 활용될 수 있는 가능성을 시사한다.
김호경,김문영 한국강구조학회 2012 International Journal of Steel Structures Vol.12 No.2
The TCUD method (Kim and Lee, 2001) can provides the reasonable initial shape of cable-supported bridges under full dead load by including the unstrained lengths of the cable members as unknowns and introducing additional constraint conditions equal to the total number of the cable members. However, the axial deformations in the girder and main tower members are not avoidable which result in some difference from a target configuration when long-span cable-supported bridges are considered. In this study, an effective method to be able to eliminate those axial deformations as well as to preserve merits of the TCUD method is newly proposed. For this purpose, the TCUD method and the initial force method with successive substitution are reviewed based on an elastic catenary cable element, respectively, and a new algorithm combining two methods efficiently is presented. In addition, a truss-cable element for modeling hangers and a beam-column element for the girder and main tower members are supplementarily developed, respectively. The proposed method is applied for two suspension bridges and a cable-stayed bridge to demonstrate its accuracy and effectiveness.
김호경 서울産業大學校 1996 논문집 Vol.43 No.1
The mechanisms that control high temperature fracture were studied in a Ni₃Al alloy with dendritic structure. Comparisons of data corresponding to the dendritic grain morphology with that for the fine equiaxed grain structure indicate that the dendritic grain morphology results in significantly lower creep rates as well as substantially greater times to rupture. Comparison of data with numerical calculations suggests that this difference in creep strength is due to an inherent resistance to grain boundary sliding by dendritic grain structure. A constrained cavity growth model was adapted based on micristructural observations to account for cavitation within the dendritic microstructure. The success of the model indicates that rupture time is primarily determined by constrained cavity growth on isolated dendrite boundary segment.
Barrier Inhomogeneity in Ag Schottky Contacts to Bulk ZnO Grown by Different Methods
김호경,손아름,김동욱 한국물리학회 2012 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.60 No.3
The electrical properties of Ag Schottky contacts to differently grown bulk ZnO single crystals were comparatively investigated. Schottky contacts to O-polar ZnO revealed higher barrier heights and lower ideality factors than those to Zn-polar ZnO. A higher degree of oxidation at the Ag-ZnO interface might occur for the O-polar ZnO, increasing the barrier heights. Compared to the current values measured under vacuum, those measured in an air ambient were decreased, suggesting that compensation of the surface conductive layer by acceptor-like adsorbates such as O2 and H2O plays an important role in the current transport of Ag/ZnO contacts.
Schottky Contacts to Polar and Nonpolar n-type GaN
김호경,박수현,Keun-Man Song,김동욱 한국물리학회 2012 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.60 No.1
Using the current-voltage measurements, we observed the barrier heights of c-plane GaN in Pt and Au Schottky contacts to be higher than those of a-plane GaN. However, the barrier height of c-plane GaN was lower than that of a-plane GaN in the Ti Schottky contacts. The N/Ga ratio calculated by integrating the X-ray photoelectron spectroscopy (XPS) spectra of Ga 3d and N 1s core levels showed that c-plane GaN induced more Ga vacancies near the interface than a-plane GaN in the Ti Schottky contacts, reducing the effective barrier height through an enhancement of the tunneling probability.
Electrical Properties of Au/n-GaN Schottky Junctions with an Atomic-Layer-Deposited Al2O3 Interlayer
김호경,조윤애,김동욱,김동하,김용,최병준 한국물리학회 2018 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.73 No.3
The temperature-dependent electrical properties of Au/GaN Schottky diodes with an Al2O3 layer prepared by using atomic layer deposition (ALD) were investigated. Compared to the Au/GaN junction, the Au/Al2O3/GaN junction was found to have lower barrier heights and higher ideality factors. For the Au/GaN junction, the native oxide and the thin surface barrier formed by surface states caused a large leakage current and a small capacitance. Due to surface passivation through the ALD process, the leakage current for the Au/Al2O3/GaN junction was reduced. The barrier height reduction for the Au/Al2O3/GaN junction was associated with interface dipole formation at the Al2O3/GaN interface.