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- 저자 : 김현빈 ( Hyun Bin Kim ) (검색결과 68 건)
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GaN HEMT기반 차량용 1.5kW급 고효율 LDC 구현
김현빈(Hyun-Bin Kim),김종수(Jong-Soo Kim) 대한전기학회 2020 전기학회논문지 Vol.69 No.2
This paper deals with how to maximize the efficiency of LDC for xEV by using GaN HEMT and improving control method. First, the characteristics of GaN HEMT are analyzed in detail and the considerations for applying them instead of conventional silicon MOSFETs to the primary side of LDC are described in detail. Second, the possibility of a phase shedding control scheme is presented to improve the low light-load efficiency due to the high step-down ratio of the LDC. Finally, the analysis results of considerations applying GaN HEMT-based synchronous rectifier instead of conventional fast recovery diodes to the secondary side of LDC are presented. The feasibility of the proposed efficiency maximization strategies is verified through a 1.5kW LDC laboratory prototype. The experimental results show high efficiency of more than 95% from 150W load condition and the maximum efficiency of 96.2%.
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국내 테마공간의 쇠퇴 요인 분석 - 테마의 비일상성 소실 과정을 중심으로 -
김현빈(Kim, Hyun-Bin),김주원(Kim, Ju-Won) 대한건축학회 2024 대한건축학회 학술발표대회 논문집 Vol.44 No.2
This study aims at analyzing the decline of themed spaces in Korea, focusing on the deterioration of non-dailiness. The definition and attributes of themed spaces were examined to understand how non-dailiness is created and lost. The study then investigated the decline of Korean themed spaces in relation to the rise of outbound tourism, which has made non-dailiness more accessible abroad. The results revealed that Korean themed spaces, relying on superficial exotic imagery, have struggled to provide meaningful Non-dailiness, leading to their decline. Based on this analysis, recommendations for improving the vitality of themed spaces were proposed.
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김현빈(Hyun Bin Kim),윤대식(Tae Sick Yoon),N. D. Ha(N. D. Ha),김종오(Chong Oh Kim) 한국자기학회 2005 한국자기학회지 Vol.15 No.1
The influence of O₂ partial pressure on saturation magnetization, coercivity, anisotropy field and effective permeability(over 1 ㎓) of as-deposited Co-Fe-Al-O thin films, which were fabricated by RF magnetron reactive sputtering method, were investigated. The Co_(69.9)Fe_(20.5)A_(14.4)O_(5.2) thin film fabricated at O₂ partial pressure of 4% exhibits the best magnetic softness with saturation magnetization (4πMs) of 18.1 kG, coercivity (Hc) of 0.82 Oe, anisotropy field (Hk) of 24 Oe, and effective permeability (μeff) about 1,024 above 1 ㎓. The electrical resistivity of Co-Fe-Al-O thin films were increased with increasing O₂ partial pressure, the electrical resistivity of Co_(69.9)Fe_(20.5)A_(14.4)O_(5.2) thin film with the best soft magnetic properties was 560.7 μΩ㎝. Therefore, It is assumed that the good soft magnetic properties of Co_(69.9)Fe_(20.5)A_(14.4)O_(5.2) thin film results from high electrical resistivity and large anisotropy field.
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