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        • KCI등재

          SCT 박막의 미세구조 및 구조적인 특성

          김진사,오용철 대한전기학회 2006 전기학회논문지C Vol.55 No.12C

          - The (Sr0.85Ca0.15)TiO3(SCT) thin films were deposited on Pt-coated electrode(Pt/TiN/SiO2/Si) using RF sputtering method according to the deposition condition. The crystallinity of SCT thin films were increased with increase of deposition temperature in the temperature range of 100~500[℃]. The optimum conditions of RF power and Ar/O2 ratio were 140[W] and 80/20, respectively. Deposition rate of SCT thin films was about 18.75[Å/min] at the optimum condition. The composition of SCT thin films deposited on Si substrate is close to stoichiometry (1.102 in A/B ratio). The maximum dielectric constant of SCT thin film was obtained by annealing at 600℃.

        • KCI등재

          RF 스퍼터링법에 의한 SCT 박막의 기판온도 영향

          김진사,오용철,조춘남,이동규,신철기,김충혁 대한전기학회 2004 전기학회논문지C Vol.53 No.10-C

          The (Sr0.9Ca0.1)TiO3(SCT) thin films are deposited on Pt-coated electrode(Pt/TiN/SiO2/Si) using RF sputtering method at various substrate temperature. The optimum conditions of RF power and Ar/O2 ratio were 140[W] and 80/20, respectively. Deposition rate of SCT thin film was about 18.75[Å/min]. The crystallinity of SCT thin films were increased with increase of substrate temperature in the temperature range of 100~500[℃]. The dielectric constant of SCT thin films were increased with the increase of substrate temperature, and changed almost linearly in temperature ranges of -80~+90[℃]. The current-voltage characteristics of SCT thin films showed the increasing leakage current as the substrate temperature increases

        • KCI등재

          SrTiO3 세라믹 박막의 Ca 치환량에 따른 특성

          김진사,오용철,조춘남,신철기,송민종,최운식,박민순,김충혁 대한전기학회 2005 전기학회논문지C Vol.54 No.9(C)

          The (Sr1-xCax)TiO3(SCT) thin films are deposited on Pt-coated electrode (Pt/TiN/SiO2/Si) using RF sputtering method with substitutional contents of Ca. The optimum conditions of RF power and Ar/O2 ratio were 140[W] and 80/20, respectively. Deposition rate of SCT thin film was about 18.75[Å/min]. The dielectric constant was increased with increasing the substitutional contents of Ca, while it was decreased if the substitutional contents of Ca exceeded over 15[mol%]. The capacitance characteristics had a stable value within ±4[%] in temperature ranges of -80~+90[℃]. All SCT thin films used in this study show the phenomena of dielectric relaxation with the increase of frequency, and the relaxation frequency is observed above 200[kHz].

        • KCI등재

          RF 스퍼터링법에 의한 SBN 박막의 표면형상 및 유전특성

          김진사,김충혁,Kim,,Jin-Sa,Kim,,Chung-Hyeok 한국전기전자재료학회 2009 전기전자재료학회논문지 Vol.22 No.8

          The $Sr_{0.7}Bi_{2.3}Nb_2O_9$(SBN) thin films are deposited on Pt-coated electrode(Pt/Ti/$SiO_2$/Si) using RF sputtering method at various deposition conditions. We investigated the effect of deposition condition on the surface morphology and dielectric properties of SBN thin films. The optimum of the rougness showed about 4.33 nm in 70/30 of Ar/$O_2$ ratio. The crystallinity and rougness of SBN thin films were increased with the increase of rf power. Also, Deposition rate of SBN thin films was about 4.17 nm/min in 70 W of rf power. The capacitance of SBN thin films were increased with the increase of Ar/$O_2$ ratio, rf power and deposition temperature respectively.

        • KCI등재

          RF 스퍼터링법에 의한 ($Sr_{1-x}Ca_x)TiO_3$ 세라믹 박막의 미세구조 및 유전특성

          김진사,오재한,이준웅 한국전기전자재료학회 1998 전기전자재료학회논문지 Vol.11 No.11

          The ($Sr_{1-x}Ca_x)TiO_3$(SCT) thin films are deposited on Pt-coated electrode($Pt/TiN/SiO_2/Si$) using RF sputtering method with substitutional contents of Ca. The maximum grain of thin films is obtained by substitution of Ca at 15[mol%]. All SCT thin films had (111) preferred orientation. The dielectric constant was increased with increasing the substitutional contents of Ca, while it was decreased if the substitutional contents of Ca exceeded over 15[mol%]. The dielectric constant changes almost linearly in temperature ranges of -80~+90[$^{\circ}C$]. The temperature properties of the dielectric loss have a stable value within 0.02 independent of the substitutional contents of Ca. All SCT thin films used in this study show the phenomena of dielectric relaxation with the increase of frequency, and the relaxation frequency is observed above 200[kHz].

        • KCI우수등재

          폴리비니리덴플루오라이드 필름의 치수효과에 의한 압전기구(I)

          김진사,김상용 한국섬유공학회 1992 한국섬유공학회지 Vol.29 No.5

          In order to explore the piezoelectric mechanism of the poly(vinylidene fluoride) (PVDF) film, the true piezoelectric constant was expressed in terms of a combination of measurable mechanical and piezoelectric constant values. Each piezoelectric constant was divided into four subgroups according to their boundary conditions and then their interrelations were derived. In addition, the values of piezoelectric constants by the dimensional effect only were calculated. Thus, if we determine the ten constants of piezoelectric film, we can reveal the contribution of the dimensional effect in the piezoelectric mechanism.

        • $(SR.Ca)TiO_3$세라믹의 하전입자 거동에 관한 연구

          김진사,최운식,신철기,김성열,박현빈,김태성,이준응 한국전기전자재료학회 1997 電氣電子材料學會誌 Vol.10 No.2

          In this paper, in order to investigate the behavior of charged particles on (Sr.Ca)TiO$_{3}$ ceramics with paraelectric properties, the characteristics of electrical conduction and thermally stimulated current was measured respectively. As a result, the conduction mechanism is divided into three regions having different mechanism as the current increased. The region I below 200[V/Cm] shows the ohmic conduction. The region B between 200[V/cm] and 2000[V/cm] can be explained by the Poole-Frenkel emission theory, and the region III above 2000[V/cm] is dominated by the tunneling effect. The three peaks of TSC were obtained at the temperature of -20[.deg. C], 20[.deg. C] and 80[.deg. C], respectively. The origins of these peaks are that the .alpha. peak observed at -20[.deg. C] looks like to be ascribed to the ionization excitation from donor level in the grain, and the .alpha.' peak observed at 20 [.deg. C] appears to show up by hopping conduction of the trapped carrier of border between the oxidation layer and the grain, and the .betha. peak observed at 80[.deg. C] seems to be resulted from hopping conduction of existing carrier in the trap site of the border between the oxidation and second phase.

        • KCI등재

          열처리온도에 따른 $(Sr_{0.85}Ca_{0.15})TiO_3$박막의 구조 및 특성

          김진사,조춘남,신철기,최운식,김충혁,이준웅 한국전기전자재료학회 2001 전기전자재료학회논문지 Vol.14 No.10

          The (S $r_{0.85}$C $a_{0.15}$)Ti $O_{3}$(SCT) thin films are deposited on Pt-coated electrode (Pt/TiN/ $SiO_2$/Si) using RF sputtering method. The composition of SCT thin films deposited on Si substrate at woom temperature is close to stoichiometry(1.102 in A/B ratio). The maximum dielectric constant of SCT thin films is obtained by annealing at 600[$^{\circ}C$]. The capacitance characteristics had a stable value within $\pm$4[%]. The drastic decrease of dielectric constant and increase of dielectric loss in SCT thin films is observed above 200[kHz]. SCT thin films used in this study show the phenomena of dielectric relaxation with the increase of frequencey.cey.

        • KCI등재

          $SrTiO_3$계 세라믹의 전기적인 특성

          김진사,소병문,이준웅 한국전기전자재료학회 1998 전기전자재료학회논문지 Vol.11 No.1

          The (Sr$_1$-\ulcorner.Ca\ulcorner)TiO$_3$(0.05 x 0.2) ceramics were fabricated to form semiconducting ceramics by sintering at about 1350[$^{\circ}C$] in a reducing atmosphere($N_2$gas). After being fired in a reducing atmosphere, metal oxides(CuO) was painted on the both surface of the specimens to diffuse to the grain boundary. The capacitance changes slowly and almost linearly in the temperature region of -40~+85[$^{\circ}C$]. The capacitance characteristics appears a stable value within $\pm$10[%]. According to increase of the frequency as a functional of temperature, all specimens used in this study showed the dielectric relaxation, and the relaxation frequency was above 10\ulcorner[Hz]. The capacitance is almost unchanged below about 20[V] but it decrease slowly over 20[V]. The voltage-current characteristics of specimens observed in the temperature range of 25~125[$^{\circ}C$] as the current increased appears that it is due to space charge condensed to interface between grain and grain boundary.

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