적외선검출소자를 위한 GaSb 결정 및 MBE로 성장한 Gasb/SI-GaAs 박막의 진성결함에 관한 연구

김준오,신현욱,최정우,이상준,노삼규,Kim, J.O.,Shin, H.W.,Choe, J.W.,Lee, S.J.,Noh, S.K. 한국진공학회 2009 Applied Science and Convergence Technology Vol.18 No.2

Sb에 기초한 응력 초격자 적외선검출소자의 구성 물질인 도핑하지 않은 기판 GaSb 결정과 GaSb/SI-GaAs 박막에 잔존하고 있는 진성결함 (intrinsic defect)을 비교 조사하였다. 상온 근처 (250 K)까지 광여기 발광 (PL)을 보이는 GaSb 결정에서의 발광 에너지의 온도의존성으로부터, 밴드갭 에너지에 관한 경험식인 Varshni 함수의 파라미터 ($E_o$, $\alpha$, $\beta$)를 결정하였다. GaAs 기판 위에 성장된 이종 GaSb 박막에서는 GaSb 주요 진성결함으로 알려져 있는 29 meV의 이온화 에너지를 가지는 위치반전 (antisite) Ga ([$Ga_{Sb}$]) 결함과 함께 위치반전 Sb ([$Sb_{Ga}$])와의 복합결함 ([$Ga_{Sb}-Sb_{Ga}$])과 관련된 것으로 분석된 732/711 meV의 한 쌍의 깊은준위 (deep level)가 관측되었다. PL의 온도 및 여기출력 의존성을 분석하여, Sb-rich상태에서 성장된 GaSb 박막에서는 잉여 Sb의 자발확산 (self-diffusion)에 의하여 치환된 위치전도 [$Ga_{Sb}$] 및 [$Sb_{Ga}$]가 결합하여 [$Ga_{Sb}-Sb_{Ga}$]의 깊은준위를 형성하는 것으로 해석되었다. We have investigated the intrinsic defects remaining in epitaxial GaSb layers grown on SI-GaAs substrates compared to those in bulk GaSb crystal substrate, which is a basic material of Sb-based strained-layer superlattice infrared photodetectors. From the functional dependence of the band-to-band transition energy of the photomuminescence (PL) spectra observing up to near room-temperature (250 K), the temperature parameters of [$E_o$, $\alpha$, $\beta$] of undoped GaSb crystal are determined by using the Varshni empirical equation describing the temperature variation of the bandgap energy. Additionally to the antisite-Ga ([$Ga_{Sb}$]) with an ionization energy of 29 meV that is well known to a major intrinsic defect in GaSb, epitaxial GaSb layers show a pair of deep states at the emission energy of 732/711 meV that may be related with a complex of two antisite-Ga and antisite-Sb ([$Ga_{Sb}-Sb_{Ga}$]). Based on the analysis of the temperature and the excitation-power dependences of PL, it suggests that excess-Sb substitutes Ga-site by self-diffusion and two anti sites of [$Ga_{Sb}$] and [$Sb_{Ga}$] could form as a complex of [$Ga_{Sb}-Sb_{Ga}$] in GaSb epilayers grown under Sb-rich condition.

인도 평지사원 탑형부조(塔形浮彫) 연구

김준오,천득염,Kim, Jun-O,Cheon, Deuk-Youm 한국건축역사학회 2011 건축역사연구 Vol.20 No.4

Stupa in India divides into two: stupa in flatland temple with a character of tomb, and devotional stupa made for offering. The difference of such character is made by whether there is any Sari, and main center for worship is flatland stupa where Sari is settled. Stupa in flatland temple is targeted to that with Sari, whose character is applied into Relief-stupa. The characteristics of Relief-stupa can be divided into two: a relief with similar type of flatland stupa in the form, and a devotional relief in which drum and upper part of tower are developed. The Relief-stupa of flatland temple could be confirmed at tower gate of Sanchi tower, decoration of handrail, and the wall attached to Amaravati and Nagarjunakonda stupa. To the contrary, drum and upper wheel part in the Relief-stupa are developed in the votive stupa. Such characteristics had different features according to usage: The example of former is that there is an expression of landscape of stupa built at that time, and the example of latter is those which had similar type of stone cave temple or offering tower near stupa. Thus, the meaning is subject to the existing of Sari. Stupa building developed along with the development of Buddhist structural activity with the existing popular tradition. And its influence was expanded along with various cultures locally. And, the structure and tower reflected various types and thoughts. Stupa reflected its building site and method according to types, and was created in a new form by its usage.

협대역 간섭신호에 의한 GPS 수신기 영향 분석

김준오,Kim Jun-O 한국군사과학기술학회 2004 한국군사과학기술학회지 Vol.7 No.2

This paper presents the GPS receiver's inherent interference effectiveness based on the receiver's internal processing gain. This research is to verify the weakness of the GPS satellite signals and evaluate the receiver's vulnerability in an interference situation. The experiment for the narrow band interference effectiveness for the L1 C/A code GPS receiver has been performed by using the Spirent GSS4765 jamming simulator. After analyzing the experimental result, it is compared with the calculated J/S value of the two different L1 C/A code GPS receivers. By the above result, the narrowband jamming effectiveness of the each jamming source and the jamming margin for the each receiver are to be analyzed in detail. Finally, we could utilize the result to analyze the jamming effectiveness on the GNSS receiver.

고분해능 XRD 분석에 의한 InAs/GaSb 응력초격자 구조의 성장 최적화 연구

김준오,신현욱,최정우,이상준,김창수,노삼규,Kim, J.O.,Shin, H.W.,Choe, J.W.,Lee, S.J.,Kim, C.S.,Noh, S.K. 한국진공학회 2009 Applied Science and Convergence Technology Vol.18 No.4

For the growth optimization of InAs/GaSb (8/8-ML) strained-layer superlattice (SLS), the structure has been grown under various conditions and modes and characterized by the high-resolution x-ray diffraction (XRD) analysis. In this study, the strain modulation is induced by changing parameters and modes, such as the growth temperature, the ratio of V/III beam-equivalent-pressure (BEP), and the growth interruption (GI), and the strain variation is analyzed by measuring the angle separation of 0th-order satellite peak in XRD patterns. The XRD results reveal that the growth temperature and the V/III(Sb/Ga) ratio are major parameters to change the crystallineity and the strain modulation in SLS structures, respectively. We have observed that the SLS samples with compressive strain prepared in this study are show a transition to tensile strain with decreasing V/III(Sb/Ga) ratio, and the GI process is a sensitive factor giving rise to strain modulation. These results obtained in this study suggest that optimized growth temperature and V/III(Sb/Ga) ratio are $350^{\circ}C$ and 20, respectively, and the appropriate GI time is approximately 3 seconds just before InAs growth that the crystallineity is maximized and the strain relaxation is minimized. InAs/GaSb (8/8-ML) 응력초격자 (SLS)의 성장 변수를 최적화하기 위하여, 다양한 조건 및 모드에서 SLS 구조를 제작하여 고분해능 X선회절 (XRD) 특성을 분석하였다. 본 연구에서는 성장온도, V/III 분자선 비율, 성장일시정지 (growth interruption, GI) 등의 변화를 통하여 SLS 계면층의 응력 변조를 유도하였고, XRD 0차 위성피크의 변위로서 응력의 변화를 고찰하였다. XRD 분석 결과로부터, SLS의 결정성과 응력의 변화를 유발하는 주요 변수는 각각 성장온도와 V/III(Sb/Ga) 비율임을 보여 주었다. 압축변형을 가지고 있는 본 연구에서 제작한 SLS 시료는 V/III(Sb/Ga) 비율의 감소에 따라 인장변형으로 전환됨을 보여 주었으며, GI 모드 및 시간에 따라 응력이 민감하게 변함을 관측할 수 있었다. 본 연구 결과로부터, [InAs/GaSb]-SLS ([8/8]-ML)의 최적 성장온도와 V/III(Sb/Ga) 비율는 각각 $350^{\circ}C$와 20이고, 결정성을 극대화하고 응력완화를 감소시키기 위해서는 InAs 성장 직전 약 3초 동안의 GI방법이 유효함을 보였다.

I/Q 벡터 모듈레이터를 이용한 GPS CRPA 패턴 제어기술

김준오,배준성,Kim, Jun-O,Bae, Jun-Seung 한국군사과학기술학회 2006 한국군사과학기술학회지 Vol.9 No.3

This paper describes the antenna based GPS anti-jamming technology called CRPA(Controlled Reception Pattern Antenna), which used $2{\times}2$ array elements. In this system, the main functions are the antenna complex weight control and the GPS digital I/Q VM(Vector Modulator). To update the VM's I/Q complex weights, the PC based DAC(Digital to Analog Converter) module was also used and the two analog output voltages were applied to the $2{\times}2$ array elements to synthesize the null pattern. In the study, we also simulated the $2{\times}2$ GPS array null patterns to compare the null depth with experimental results. The VM was also modified at the frequency of 1.575GHz for the GPS L1 and controlled by the PC based VM software.

InAs/GaSb 응력초격자를 이용한 적외선검출소자의 제작 및 특성 연구

김준오,신현욱,최정우,이상준,김창수,노삼규,Kim, J.O.,Shin, H.W.,Choe, J.W.,Lee, S.J.,Kim, C.S.,Noh, S.K. 한국진공학회 2009 Applied Science and Convergence Technology Vol.18 No.2

150 주기의 InAs/GaSb (8/8-ML) 제2형 응력초격자 (SLS)를 활성층에 탑재한 초격자 적외선검출소자 (SLIP) 구조를 MBE 방법으로 성장하고, 직경 $200{\mu}m$의 개구면을 가지는 SLIP 개별소자를 시험 제작하였다 고분해능 투과전자현미경 (TEM) 이미지의 휘도분포와 X선회절 (XRD) 곡선의 위성피크의 분석 결과는 SLS 활성층은 균일한 층두께와 주기적 응력변형을 유지하는 급격한 계면의 초격자임을 입증하였다. 흑체복사 적외선 광원을 이용하여 측정한 입사파장 및 인가전압에 따른 반응도 (R)와 검출률 ($D^*$)로부터, 차단파장은 ${\sim}5{\mu}m$이고 최대 R과 $D^*$ ($\lambda=3.25{\mu}m$)는 각각 ${\sim}10^3mA/W$ (-0.6 V/13 K)와 ${\sim}10^9cm.Hz^{1/2}/W$ (0 V/13 K)임을 보였다. 반응도의 온도의존성으로부터 분석한 활성화에너지 275 meV는 광반응 과정에 개입되어 있는 가전대 및 전도대 부준위 사이의 에너지 간격 (HH1-C)과 잘 일치하였다. The superlattice infrared photodetector (SLIP) with an active layer of 8/8-ML InAs/GaSb type-II strained-layer superlattice (SLS) of 150 periods was grown by MBE technique, and the proto-type discrete device was defined with an aperture of $200-{\mu}m$ diameter. The contrast profile of the transmission electron microscope (TEM) image and the satellite peak in the x-ray diffraction (XRD) rocking curve show that the SLS active layer keeps abrupt interfaces with a uniform thickness and a periodic strain. The wavelength and the bias-voltage dependences of responsivity (R) and detectivity ($D^*$) measured by a blackbody radiation source give that the cutoff wavelength is ${\sim}5{\mu}m$, and the maximum Rand $D^*$ ($\lambda=3.25{\mu}m$) are ${\sim}10^3mA/W$ (-0.6 V/13 K) and ${\sim}10^9cm.Hz^{1/2}/W$ (0 V/13 K), respectively. The activation energy of 275 meV analyzed from the temperature dependent responsivity is in good agreement with the energy difference between two SLS subblevels of conduction and valence bands (HH1-C) involving in the photoresponse process.

수평 자기정렬 InGaAs/GaAs 양자점의 형태 및 분광 특성 연구

김준오,최정우,이상준,노삼규,Kim J. O.,Choe J. W.,Lee S. J.,Noh S. K. 한국진공학회 2006 Applied Science and Convergence Technology Vol.15 No.1

Laterally self-aligned InGaAs/GaAs quantum-dots (QDs) have been fabricated by using a multilayer stacking technique. For the growth optimization, we vary the number of stacks and the growth temperature in the ranges of 1-15 periods and $500-540^{\circ}C$. respectively, Atomic force microscope (AFM) images and photoluminescence (PL) spectra reveal that the lateral alignment of QDs is enhanced in extended length by an increased stack period, but severely degrades into film-like wires above a critical growth temperature. The morphological and the photoluminescence characteristics of laterally self-aligned InGaAs QDs have been analyzed through mutual comparisons among four samples with different parameters. An anisotropic arrangement develops with increasing number of stacks, and high-temperature capping allows isolated QDs to be spontaneously organized into a one-dimensionally aligned chain-like shape over a few ${\mu}m$, Moreover, the migration time allowed by growth interruption plays an additional important role in the chain arrangement of QDs. The QD chains capped at high temperature exhibit blue shifts in the emission energy, which may be attributed to a slight outdiffusion of In from the InGaAs QDs. 다중 적층법을 이용하여 수평방향으로 자기정렬된 InGaAs/GaAs 양자점(quantum dot, QD)을 제작하고, 원자력간 현미경(AFM) 사진과 발광(PL) 스펙트럼을 이용하여 QD의 특성을 분석하였다. 적층주기가 증가함에 따라 정렬 QD의 길이가 길어지고, 임계 성장온도 이상에서는 QD 사이의 상호확 산에 의하여 양자선 형태로 변화함을 관측하였다. 성장 변수가 서로 다른 4개 시료의 비교 분석을 통하여, 수직으로 적층되면서 비등방성 정렬이 이루어지고, 수 ${\mu}m$ 이상 1차원적으로 정렬된 QD 사슬 모양 의 구조를 얻을 수 있었다. 또한 성장일시멈춤 과정을 통한 이주시간의 증가는 QD의 1차윈 정렬에 중요한 변수임을 알 수 있었다. 고온에서 덮개층을 형성한 QD 구조에서 관측된 발광 에너지의 청색변위 현상은 InGaAs QD로부터 In이 덮개층으로 확산되었기 때문으로 해석된다.

인도 석굴사원의 Relief Stupa 연구

김준오,천득염,Kim, Jun-O,Cheon, Deuk-Youm 한국건축역사학회 2012 건축역사연구 Vol.21 No.4

The Buddhist cave temple carved into the rock provides a large space for the ritual in general in which a structure of Stupa is built in the center of the space purely for religious worship empty of Sarira, and the temple is formed around this Stupa. Relief-Stupa of the cave temple indicates the similar shape that of Relief-religious worship of flat land temple. However, there appears a small difference in representation since the background of formation of the cave temple differs in that of flat land temple. Specially, Caitya Stupa of currently existing cave temples have been damaged to lose of their original shape only possible to be analyzed the stylistic development through Relief-Stupa from which the characteristic of Stupa could be understood. The early cave temple could be characterized with a balanced structure consists of upturn bowl, steeple stone with simple drum & Hamikawasnagae, in which it appears strongly the detail factor characteristics of drum & steeple of having system with Caitya Stupa. In the post cave temple, the subject of worship moved to statue of Buddha due to the influence of Gandhara, Mathura art which reduced the importance of Stupa. This illustrates in Relief-stupa as well the style change as well as changes in detail factor. The sculpture appeared at the limited location either the wall of Caitya shrine or pillar in vihara cave with stronger decorative meaning. Contrast to the Relief Stupa of early flat land temples or the cave temples mentioned above sculptured with symbolism, however, the post cave temple showed the relief structure based on the plan of flat plan.

산화티탄 광전극 제작조건과 염료감응 태양전지 효율과의 상관관계 연구

김준오(Junoh Kim),김진엽(Jinyeop Kim),송채윤(Chaeyoon Song),김진성(Jinsung Kim),양승준(Seungjoon Yang),성열문(Youl Moon Sung) 대한전기학회 2015 대한전기학회 학술대회 논문집 Vol.2015 No.7

소형자동차를 이용한 실험실 기반 타이어미세먼지 농도측정 실험

김준오(Jun-O Kim),김지성(Ji-Seong Kim),김도영(Do-Young Kim),최갑승(Kap-Seung Choi) 한국트라이볼로지학회 2021 한국트라이볼로지학회 학술대회 Vol.2021 No.10