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관측자를 이용한 영구자석형 동기모터의 저속영역 속도리플 개선
김정태(Chung-tae Kim),노철원(Chul-won Noh),최종률(Song-yul Choe) 전력전자학회 1997 전력전자학술대회 논문집 Vol.1997 No.-
Generally, we often use a speed sensor based on a rotary encoder and we can obtain a speed information by counting the increased or decreased number of encoder pulses in a sampling period. However, these speed measurement systems do not inherently produce a true, instanta-neous speed information and then, the speed ripple is generated by speed measurement errors.<br/> In order to overcome this problem, speed observer is used for the accurate speed measurement and Improvement of speed ripple for Permancnt Magnet Synchronous Motor (PMSM) in this paper. Speed observer estimates the instantaneous speed at each sampling instant. Tills estimated speed signal is then used as the speed feedback signal for the speed loop control. The proposed speed observer system is proved by simulation using SABER simulation S/W.
김정태(Chung-Tae Kim),육창수(Chang-Soo Yook) 한국생약학회 1981 생약학회지 Vol.12 No.1
Morinda offcinalis How is one of the representative plants in Morinda group. The root bark has been used as a crude drug for the purpose of tonic, warming and sex impulse. The results obtained are as follow; (1) Unsaponifiable matter, as mixture of two sterol was identified as stigmasterol, β-sitosterol and unknown sterol by GLC, Massspectra. (2) Substance II was confirmed as Ascorbic acid (mp 189∼190˚). (3) By using amino acid autoanalyzer, 17 amino acid were detected from the root bark and root woody part. Of these, threonine, proline, glutamic acid, valine are contained in the highest amount.
LPCVD로 제조된 다결정실리콘에 As를 주입한 시료의 비저항에 대한 온도의존성 연구
하형찬,김정태,고철기,천희곤,오계환,Ha, Hyoung-Chan,Kim, Chung-Tae,Ko, Chul-Gi,Chun, Hui-Gon,Oh, Kye-Hwan 한국재료학회 1991 한국재료학회지 Vol.1 No.1
저압 화학 증착법으로 증착된 다결정실리콘에 As를 이온주입하여 As농도와 $25~105^{\circ}C$ 범위의 측정온도에 따른 비저항의 변화를 조사하였다. 비저항이 최대가 되는 적정 As농도가 존재하였으며 이때 비저항의 온도의존성면에서 활성화에너지 값도 최대를 보였다. Passivation공정후 감소된 비저항이 $O_2$플라즈마 처리와 $N_2$ 분위기에서의 열처리에 의하여 회복되는 현상에 대하여 설명한다. The resistivity of polycrystalline silicon film deposited by low pressure chemical vapor deposition and doped by arsenic Implantation has been investigated as a function of dopant concentration and testing temperature ranging from $25^{\circ}C$ to $105^{\circ}C$ . The resistivity vs. doping concentration curve had a peak point with highest activation energy with respect to the dependence of the resistivity on temperature. We showed that $O_2$ plasma anneal followed by heat-treatment in $N_2$ ambient was able to recover the resistivity degraded by the plasma deposited passivation layers.
이층 배선공정에서 층간 절연막의 층덮힘성 연구 : PECVD와 $O_3$ThCVD 산화막
박대규,김정태,고철기,Park, Dae-Gyu,Kim, Chung-Tae,Go, Cheol-Gi 한국재료학회 1992 한국재료학회지 Vol.2 No.3
서브마이크론 설계규칙을 갖는 소자의 이층 배선 공정에서 다챔버 장비를 이용한 금속 층간절연막의 공극없는 평탄화를 위하여 PECVD와 $O_3$ ThCVD산화막의 증착시 층덮힘성을 연구하였다. 산화막의 두께가 증가됨에 따라 변화되는 순간단차비의 개념을 도입하여 공극형성의 개시점을 예측할 수 있는 관계식을 모델링하였고, 금속배선간격의 초기 단차비가 다양한 패턴에서 산화막의 두께에 따른 순간 단차비의 변화를 조사하였다. 모델링 검정결과 $5^{\circ}$이하의 re-entrant각을 갖는 TEOS에 의한 PECVO 산화막의 순간단차비가 모델링에 잘 일치하였다. 공극없는 평탄화는 제1층의 PECVD 산화막의 순간 단차비를 0.8이하로 유지하거나 Ar sputter식각을 통하여 산화막의 모서리에 경사를 준후 층덮힘성이 우수한 $O_3$ ThCVD산화막을 증착함으로써 가능하였다. $O_3$ ThCVD산화막의 etchback이 non etchback공정에 비하여 via접쪽저항체인에서 높은 수율을 보였으며, via접촉저항은 $0.1~0.3{\Omega}/{\mu}m^2$로 나타났다. An investigation on the step-coverage of PECVD and $O_3$ ThCVD oxides was undertaken to implement into the void-free inter metal dielectric planarization using multi-chamber system for the submicron double level metallization. At various initial aspect ratios the instantaneous aspect ratios were measured through modelling and experiment by depositing the oxides up to $0.9{\mu}m$ in thickness in order to monitor the onset of void formation. The modelling was found to be in a good agreement with the observed instantaneous aspect ratio of TEOS-based PECVD oxide whose re-entrant angle was less than $5^{\circ}$. It is demonstrated that either keeping the instantaneous aspect ratio of PECVD oxide as a first layer less than a factor of 0.8 or employing Ar sputter etch to create sloped oxide edge ensures the void-free planarization after$O_3$ ThCVD oxide deposition whose step-coverage is superior to PECVD oxide. It has been observed that $O_3$ ThCVD oxide etchback scheme has shown higher yield of via contact chain than non etchback process, with resistance per via contact of $0.1~0.3{\Omega}/{\mu}m^2$.