http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
허성보 ( S B Heo ),이영진 ( Y J Lee ),김선광 ( S K Kim ),유용주 ( Y Z You ),최대한 ( D H Choi ),이병훈 ( B H Lee ),김민규 ( M G Kim ),김대일 ( Daeil Kim ) 한국열처리공학회 2012 熱處理工學會誌 Vol.25 No.6
SnO₂ thin films were prepared on the Si substrate by radio frequency magnetron sputtering and then surface of the films were irradiated with intense Ar ion beam to investigate the effect of Ar ion irradiation on the properties and hydrogen gas sensitivity of the films. From atomic force microscope observation it is sup-posed that intense Ar bombardments promote rough surface and increase gas sensitivity of SnO₂ films for hydro-gen gas. The films that Ar ion beam irradiated at 6 keV show the higher sensitivity than the films were irradiated at 3 keV and 9keV. These results suggest that the SnO₂ thin films irradiated with optimized Ar ion beam are promising for practical high-performance hydrogen gas sensors.
전자빔 열처리에 따른 TiO2 박막의 수소가스 검출 특성 연구
허성보 ( S. B. Heo ),이학민 ( H. M. Lee ),정철우 ( C. W. Jung ),김선광 ( S. K. Kim ),이영진 ( Y. J. Lee ),김유성 ( Y. S. Kim ),유용주 ( Y. Z. You ),김대일 ( D. Kim ) 한국열처리공학회 2011 熱處理工學會誌 Vol.24 No.1
TiO2 films were deposited on a glass substrate with RF magnetron sputtering and then surface of TiO2 films were electron beam irradiated in a vacuum condition to investigate the effect of electron bombardment on the thin film crystallization, surface roughness and gas sensitivity for hydrogen. TiO2 films that electron beam irradiated at 450eV were amorphous phase, while the films irradiated at 900eV show the anatase (101) diffraction peak in XRD pattern. AFM measurements show that the roughness is depend on the electron irradiation energy. As increase the hydrogen gas concentration and operation temperature, the gas sensitivity of TiO2 and TiO2/ZnO films is increased proportionally and TiO2 films that electron beam irradiated at 900eV show the higher sensitivity than the films were irradiated at 450eV. From the XRD pattern and AFM observation, it is supposed that the crystallization and rough surface promote the hydrogen gas sensitivity of TiO2 films. (Received November 5, 2010; Revised December 13, 2010; Accepted January 3, 2011)
증착 후 열처리온도에 따른 SnO2 박막의 수소 검출민감도 변화
유용주 ( Y Z You ),김선광 ( S K Kim ),이영진 ( Y J Lee ),허성보 ( S B Heo ),이학민 ( H M Lee ),김대일 ( Dae Il Kim ) 한국열처리공학회 2012 熱處理工學會誌 Vol.25 No.5
SnO2 thin films were prepared on the Si substrate by radio frequency (RF) magnetron sputtering and then post deposition vacuum annealed to investigate the effect of annealing temperature on the structural properties and hydrogen gas sensitivity of the films. The films that annealed at 300℃ show the higher sensitivity than the other films annealed at 150℃. From atomic force microscope observation, it is supposed that post deposition annealing promotes the rough surface and also, increase gas sensitivity of SnO2 films for hydrogen gas. These results suggest that the vacuum annealed SnO2 thin films at optimized temperatures are promising for practical high-performance hydrogen gas sensors.