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N,N'-bis-[2(S)-pyrrolidinylmethyl]ethane-1,2-diamine이 배위된 trans-Dichlorocobalt(Ⅲ) 착물의 합성과 특성
김동엽,김남진,손병삼,이동진,오창언,도명기,Kim, Dong Yeup,Kim, Nam Jin,Son, Byung Sam,Lee, Dong Jin,Oh, Chang Eon,Doh, Myung Ki 대한화학회 1995 대한화학회지 Vol.39 No.12
입체특이성을 가지는 N, N'-bis-[2(S)-pyrrolidinylmethyl]ethane-1, 2-diamine(SS-epm) 리간드를 합성하여, $CoCl_2{\cdot}6H_2O$와 trans-$[Co(pyridine)_4Cl_2]Cl$에 각각 반응시켜 녹색결정을 얻었다. 원소분석과 전자흡수스펙트럼 자료에 따라 trans-$[Co(SS-epm)Cl_2]_2(COCl_4)$의 조성을 갖게됨을 확인하였다. 또한, 착물의 CD스펙트럼에서는 리간드의 입체특이성으로 인해 vicinal effect가 유발되었고, 장파장에서 음(-)의 cotton 효과를 나타내었으며, 킬레이트된 리간드의 conformation은 5원 킬레이트고리에 대해 ${\delta}{\lambda}{\delta}$(SRRS)를 취하고 있었다. SS-epm 리간드가 배위된 trans형 착물의 생성은 대이온으로 작용한 $Co(II)Cl_4^{2-}$가 대단히 중요한 이온회합 효과를 갖고 있음을 알게 되었다. 아울러, 분자역학(MM)적 방법으로 이차아민의 배향에 따른 각 이성질체의 strain energy를 계산하여, 평형상태에서 안전한 이성질체를 찾고, 동시에 분광학적 자료와 비교 검토하였다. The SS-epm(N,N '-bis-[2(S)-pyrrolidinylmethyl]ethane-1,2-diamine) ligand having stereospecificity has been prepared and reacted with $CoCl_2{\cdot}6H_2O$ or trans-$[Co(pyridine)_4Cl_2]Cl.$ The resultants are green crystals, both of which are identified to be trans-$[Co(SS-epm)Cl_2]_2(COCl_4)$ by elemental analysis and absorption spectra. CD spectrum of trans complex shows negative (-) cotton effect at long wavelength due to the vicinal effect of the stereospecifically chelated ligands. The conformation of SS-epm in trans complex is ${\delta}{\lambda}{\delta}$(SRRS) for each of the five membered chelated ring. $Co(II)Cl_4^{2-}$ as counter ion plays an importance role in the ionic association of the formation of trans complex with SS-epm. Furthermore, according to orientation of secondary amine, total strain energy on each isomers was calculated by molecular mechanics (MM) to verify structural characterization and spectral data.
GBN/SSN 억제를 위한 이종 셀 EBG 구조를 갖는 전원면
김동엽,주성호,이해영,Kim, Dong-Yeop,Joo, Sung-Ho,Lee, Hai-Young 한국전자파학회 2007 한국전자파학회논문지 Vol.18 No.2
본 논문에서는 넓은 영역에서 GBN/SSN 억제 특성을 보이는 이종 셀 EBG 구조를 이용한 새로운 전원면 구조를 제안하였다. 제안된 구조는 -30 dB 이하의 삽입 손실로 정의되는 저지 대역이 GBN의 에너지가 집중적으로 분포하는 수 백 MHz에서 시작하며 약 7.9 GHz의 넓은 대역폭을 갖는다. 본 구조의 특징은 인덕턴스를 강화하는 나선형 연결 선로와 분산적 LC 회로의 주기를 줄이는 이종 셀을 추가한 것이다. 그 결과 -30 dB 저지 대역의 저주파에서의 차단 주파수가 낮아짐은 물론 대역폭이 넓어진 특성을 보였다. 또한, 전원면과 접지면 사이의 구조적 공진 모드가 현격히 억제되었으며 평행판 도파관에 비해 낮은 EMI 특성을 보였다. In this paper, a novel power/ground plane using the hybrid-cell electromagnetic band-gap(EBG) structure is proposed for the wide-band suppression of the ground bound noise(GBN) or simultaneous switching noise(SSN). The -30 dB stopband of the proposed structure starts from a few hundred MHz where the GBN/SSN energy is dominant. The distinctive features of this new structure are the thin spiral strip line and hybrid-cells. They realize the enhanced inductance and the shorter period of the EBG lattice. As a result, the lower cut-off frequency and bandwidth of the -30 dB stopband becomes lower and wider, respectively. In addition, the proposed structure has smaller number of resonance modes between power/ground planes and performs a low EMI behavior compared with the reference board.
고각 환형 암시야 주사투과전자현미경기법과 투과전자현미경기법을 이용한 상용 청색 발광다이오드의 종합적인 구조분석
김동엽,홍순구,정태훈,이상헌,백종협,Kim, Dong-Yeob,Hong, Soon-Ku,Chung, Tae-Hoon,Lee, Sang Hern,Baek, Jong Hyeob 한국재료학회 2015 한국재료학회지 Vol.25 No.1
This study suggested comprehensive structural characterization methods for the commercial blue light emitting diodes(LEDs). By using the Z-contrast intensity profile of Cs-corrected high-angle annular dark field scanning transmission electron microscope(HAADF-STEM) images from a commercial lateral GaN-based blue light emitting diode, we obtained important structural information on the epilayer structure of the LED, which would have been difficult to obtain by conventional analysis. This method was simple but very powerful to obtain structural and chemical information on epi-structures in a nanometer-scale resolution. One of the examples was that we could determine whether the barrier in the multi-quantum well(MQW) was GaN or InGaN. Plan-view TEM observations were performed from the commercial blue LED to characterize the threading dislocations(TDs) and the related V-pit defects. Each TD observed in the region with the total LED epilayer structure including the MQW showed V-pit defects for almost of TDs independent of the TD types: edge-, screw-, mixed TDs. The total TD density from the region with the total LED epilayer structure including the MQW was about $3.6{\times}10^8cm^{-2}$ with a relative ratio of Edge- : Screw- :Mixed-TD portion as 80%: 7%: 13%. However, in the mesa-etched region without the MQW total TD density was about $2.5{\times}10^8cm^{-2}$ with a relative ratio of Edge- : Screw- :Mixed-TD portion of 86%: 5%: 9 %. The higher TD density in the total LED epilayer structure implied new generation of TDs mostly from the MQW region.