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Role of Oxygen in Green Emission from ZnO Thin Films
공동호,김태근,박정호,최원철,신영철 한국물리학회 2006 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.48 No.6
To confirm the role of oxygen in green emission from ZnO thin films on Si(100) substrates, we deposited thin films sputtering with a ZnO target. The O2 content, as a reactive gas was changed, and a sequential annealing was done in a N2 or an O2 atmosphere. The photoluminescence spectra, showed that thermal annealing in an O2 ambient, rather than increasing the content of O2 gas during the deposition process, was very effective in increasing the green emission from the ZnO thin films. This may be associated with the fact that the number of interstitial Zn (Zni) and O vacancies (VO) is reduced by the effective incorporation of oxygen atoms during the annealing process. We also found from the results of Fourier transform infrared and X-ray diffraction measurements that zinc silicate (Zn2SiO4) was generated at the interface during thermal annealing. However, we could not find any evidence that the green emission (520 nm) originated from zinc silicate.!
Formation of Europium-Silicate Thin Films and Their Photoluminescence Properties
신영철,김태근,김범준,공동호,김민호,최원철 한국물리학회 2006 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.48 No.6
Strong photoluminescence (PL) centered at 600 nm was observed from europium-silicate thin .lms. The .lms were fabricated on Si(100) substrates by using a radio-frequency magnetron sput- tering method and subsequent rapid thermal annealing (RTA) in a nitrogen ambient. The mech- anism for the formation of the europium silicates during the annealing process was investigated by using X-ray diraction spectroscopy and Auger electron spectroscopy. The optical transitions associated with divalent europium ions are thought to be responsible for the intense red PL emitted from the europium-silicate thin .lms.f