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박용준,박남규,류광선,장순호,박신종,윤선미,김동국,Park, Yong Jun,Park, Nam Gyu,Ryu, Gwang Seon,Jang, Sun Ho,Park, Sin Jong,Yun, Seon Mi,Kim, Dong Guk Korean Chemical Society 2001 Bulletin of the Korean Chemical Society Vol.22 No.9
Vanadium oxide thin films with thickness of about 2000 $\AA$ have been prepared by radio frequency sputter deposition using a V2O5 target in a mixed argon and oxygen atmosphere with different Ar/O2 ratio ranging from 99/1 to 90/10. X-ray diffraction and X-ray absorption near edge structure spectroscopic studies show that the oxygen content higher than 5% crystallizes a stoichiometric V2O5 phase, while oxygen deficient phase is formed in the lower oxygen content. The oxygen content in the mixed Ar + O2 has a significant influence on electrochemical lithium insertion/deinsertion property. The discharge-charge capacity of vanadium oxide film increases with increasing the reactive oxygen content. The V2O5 film deposited at the Ar/O2 ratio of 90/10 exhibits high discharge capacity of 100 ${\mu}Ah/cm2-{\mu}m$ along with good cycle performance.
TiN 기판 위에 성장시킨 비정질 BaSm<sub>2</sub>Ti<sub>4</sub>O<sub>12</sub> 박막의 구조 및 전기적 특성 연구
박용준,백종후,이영진,정영훈,남산,Park, Yong-Jun,Paik, Jong-Hoo,Lee, Young-Jin,Jeong, Young-Hun,Nahm, Sahn 한국재료학회 2008 한국재료학회지 Vol.18 No.4
The structural and electrical properties of amorphous $BaSm_2Ti_4O_{12}$ (BSmT) films on a $TiN/SiO_2/Si$ substrate deposited using a RF magnetron sputtering method were investigated. The deposition of BSmT films was carried out at $300^{\circ}C$ in a mixed oxygen and argon ($O_2$ : Ar = 1 : 4) atmosphere with a total pressure of 8.0 mTorr. In particular, a 45 nm-thick amorphous BSmT film exhibited a high capacitance density and low dissipation factor of $7.60\;fF/{\mu}m2$ and 1.3%, respectively, with a dielectric constant of 38 at 100 kHz. Its capacitance showed very little change, even in GHz ranges from 1.0 GHz to 6.0 GHz. The quality factor of the BSmT film was as high as 67 at 6 GHz. The leakage current density of the BSmT film was also very low, at approximately $5.11\;nA/cm^2$ at 2 V; its conduction mechanism was explained by the the Poole-Frenkel emission. The quadratic voltage coefficient of capacitance of the BSmT film was approximately $698\;ppm/V^2$, which is higher than the required value (<$100\;ppm/V^2$) for RF application. This could be reduced by improving the process condition. The temperature coefficient of capacitance of the film was low at nearly $296\;ppm/^{\circ}C$ at 100 kHz. Therefore, amorphous BSmT grown on a TiN substrate is a viable candidate material for a metal-insulator-metal capacitor.