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Jin Kim, Dong,Oh, Joon-Ho,Soo Kim, Han,Soo Kim, Young,Jeong, Manhee,Goo Kang, Chang,Jin Jo, Woo,Choi, Hyojeong,Guk Kim, Jong,Hee Lee, Seung,Ho Ha, Jang TECHNICAL UNIVERSITY OF WROCLAW 2016 MATERIALS SCIENCE -WROCLAW- Vol.34 No.2
<P><B>Abstract</B></P><P>TlBr single crystals grown using the vertical Bridgman-Stockbarger method were characterized for semiconductor based radiation detector applications. It has been shown that the vertical Bridgman-Stockbarger method is effective to grow high-quality single crystalline ingots of TlBr. The TlBr single crystalline sample, which was located 6 cm from the tip of the ingot, exhibited lower impurity concentration, higher crystalline quality, high enough bandgap (>2.7 eV), and higher resistivity (2.5 × 10<SUP>11</SUP>Ω·cm) which enables using the fabricated samples from the middle part of the TlBr ingot for fabricating high performance semiconductor radiation detectors.</P>