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Silicon Interfacial Passivation Layer Chemistry for High-<i>k</i>/InP Interfaces
Dong, Hong,Cabrera, Wilfredo,Qin, Xiaoye,Brennan, Barry,Zhernokletov, Dmitry,Hinkle, Christopher L.,Kim, Jiyoung,Chabal, Yves J.,Wallace, Robert M. American Chemical Society 2014 ACS APPLIED MATERIALS & INTERFACES Vol.6 No.10
<P>The interfacial chemistry of thin (1 nm) silicon (Si) interfacial passivation layers (IPLs) deposited on acid-etched and native oxide InP(100) samples prior to atomic layer deposition (ALD) is investigated. The phosphorus oxides are scavenged completely from the acid-etched samples but not completely from the native oxide samples. Aluminum silicate and hafnium silicate are possibly generated upon ALD and following annealing. The thermal stability of a high-<I>k</I>/Si/InP (acid-etched) stack are also studied by in situ annealing to 400 and 500 °C under ultrahigh vacuum, and the aluminum oxide/Si/InP stack is the most thermally stable. An indium out-diffusion to the sample surface is observed through the Si IPL and the high-<I>k</I> dielectric, which may form volatile species and evaporate from the sample surface.</P><P><B>Graphic Abstract</B> <IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/aamick/2014/aamick.2014.6.issue-10/am500752u/production/images/medium/am-2014-00752u_0010.gif'></P>