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Tang, Zhenjie,Zhao, Dongqiu,Hu, Huiping,Li, Rong,Yin, Jiang The Korean Institute of Electrical and Electronic 2014 Transactions on Electrical and Electronic Material Vol.15 No.2
$Pt/Al_2O_3/La_2Si_5O_x/SiO_2/Si$ charge trap memory capacitors were prepared, in which the $La_2Si_5O_x$ film was used as the charge trapping layer, and the effects of post annealing atmospheres ($NH_3$ and $N_2$) on their memory characteristics were investigated. $La_2O_3$ nanocrystallites, as the storage nodes, precipitated from the amorphous $La_2Si_5O_x$ film during rapid thermal annealing. The $NH_3$ annealed memory capacitor showed higher charge storage performances than either the capacitor without annealing or the capacitor annealed in $N_2$. The memory characteristics were enhanced because more nitrogen was incorporated at the $La_2Si_5O_x/SiO_2$ interface and interfacial reaction was suppressed after the $NH_3$ annealing treatment.
Tang, Zhenjie,Zhao, Dongqiu,Li, Rong,Zhu, Xinhua The Korean Institute of Electrical and Electronic 2014 Transactions on Electrical and Electronic Material Vol.15 No.1
Charge trapping nonvolatile memory capacitors with $ZrO_2$ as charge trapping layer were fabricated, and the effects of post annealing atmosphere ($NH_3$ and $N_2$) on their memory storage characteristics were investigated. It was found that the memory windows were improved, after annealing treatment. The memory capacitor after $NH_3$ annealing treatment exhibited the best electrical characteristics, with a 6.8 V memory window, a lower charge loss ~22.3% up to ten years, even at $150^{\circ}C$, and excellent endurance (1.5% memory window degradation). The results are attributed to deep level bulk charge traps, induced by using $NH_3$ annealing.
Zhenjie Tang,Dongqiu Zhao,Rong Li,Xinhua Zhu 한국전기전자재료학회 2014 Transactions on Electrical and Electronic Material Vol.15 No.1
Charge trapping nonvolatile memory capacitors with ZrO2 as charge trapping layer were fabricated, and the effectsof post annealing atmosphere (NH3 and N2) on their memory storage characteristics were investigated. It was foundthat the memory windows were improved, after annealing treatment. The memory capacitor after NH3 annealingtreatment exhibited the best electrical characteristics, with a 6.8 V memory window, a lower charge loss ~22.3% up toten years, even at 150℃, and excellent endurance (1.5% memory window degradation). The results are attributed todeep level bulk charge traps, induced by using NH3 annealing.
Effect of Annealing Atmosphere on the La2O3 Nanocrystallite Based Charge Trap Memory
Zhenjie Tang,Dongqiu Zhao,Huiping Hu,Rong Li,Jiang Yin 한국전기전자재료학회 2014 Transactions on Electrical and Electronic Material Vol.15 No.2
Pt/Al2O3/La2Si5Ox/SiO2/Si charge trap memory capacitors were prepared, in which the La2Si5Ox film was used as thecharge trapping layer, and the effects of post annealing atmospheres (NH3 and N2) on their memory characteristicswere investigated. La2O3 nanocrystallites, as the storage nodes, precipitated from the amorphous La2Si5Ox film duringrapid thermal annealing. The NH3 annealed memory capacitor showed higher charge storage performances thaneither the capacitor without annealing or the capacitor annealed in N2. The memory characteristics were enhancedbecause more nitrogen was incorporated at the La2Si5Ox/SiO2 interface and interfacial reaction was suppressed afterthe NH3 annealing treatment.
Tang, Zhenjie,Ma, Dongwei,Jing, Zhang,Jiang, Yunhong,Wang, Guixia,Zhao, Dongqiu,Li, Rong,Yin, Jiang The Korean Institute of Electrical and Electronic 2014 Transactions on Electrical and Electronic Material Vol.15 No.5
Charge trap flash memory capacitors incorporating $(HfO_2)_x(Al_2O_3)_{1-x}$ film, as the charge trapping layer, were fabricated. The effects of the charge trapping layer composition on the memory characteristics were investigated. It is found that the memory window and charge retention performance can be improved by adding Al atoms into pure $HfO_2$; further, the memory capacitor with a $(HfO_2)_{0.9}(Al_2O_3)_{0.1}$ charge trapping layer exhibits optimized memory characteristics even at high temperatures. The results should be attributed to the large band offsets and minimum trap energy levels. Therefore, the $(HfO_2)_{0.9}(Al_2O_3)_{0.1}$ charge trapping layer may be useful in future nonvolatile flash memory device application.
Zhenjie Tang,Ma Dongwei,Zhang Jing,Jiang Yunhong,Wang Guixia,Zhao Dongqiu,Rong Li,Jiang Yin 한국전기전자재료학회 2014 Transactions on Electrical and Electronic Material Vol.15 No.5
Charge trap flash memory capacitors incorporating (HfO2)x(Al2O3)1-x film, as the charge trapping layer, were fabricated. The effects of the charge trapping layer composition on the memory characteristics were investigated. It is found thatthe memory window and charge retention performance can be improved by adding Al atoms into pure HfO2; further,the memory capacitor with a (HfO2)0.9(Al2O3)0.1 charge trapping layer exhibits optimized memory characteristicseven at high temperatures. The results should be attributed to the large band offsets and minimum trap energylevels. Therefore, the (HfO2)0.9(Al2O3)0.1 charge trapping layer may be useful in future nonvolatile flash memory deviceapplication.