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M. Khaouani,H. Bencherif,A. Hamdoune,A. Belarbi,Z. Kourdi 한국전기전자재료학회 2021 Transactions on Electrical and Electronic Material Vol.22 No.4
In this paper, we performed a Pseudo-morphic High Electron Mobility Transistors (pHEMT) In0.3 Al0.7 As/InAs/InSb/In0.3 Al0.7 using Silvaco-TCAD. RF and analog electrical characteristics are assessed under high temperature eff ect. The impact of the temperature is evaluated referring to a device at room temperature. In particular, the threshold voltage ( V th ), transconductance ( g m ), and I on / I off ratio are calculated in the temperature range of 300 K to 700 K. The primary device exhibits a drain current of 950 mA, a threshold voltage of −1.75 V, a high value of transconductance g m of 650 mS/mm, I on / I off ratio of 1 × 10 6 , a transition frequency ( f t ) of 790 GHz, and a maximum frequency ( f max ) of 1.4 THZ. The achieved results show that increasing temperature act to decrease current, reduce g m , and I on / I off ratio. In more detail high temperature causes a phonon scattering mechanism happening that determine in turn a reduced drain current and shift positively the threshold voltage resulting in hindering the device DC/AC capability.