http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
Analytic Threshold Voltage Model of Recessed Channel MOSFETs
Yongmin Kwon,Yeonsung Kang,Sanghoon Lee,Byung-Gook Park,Hyungcheol Shin 대한전자공학회 2010 Journal of semiconductor technology and science Vol.10 No.1
Threshold voltage is one of the most important factors in a device modeling. In this paper, analytical method to calculate threshold voltage for recessed channel (RC) MOSFETs is studied. If we know the fundamental parameter of device, such as radius, oxide thickness and doping concentration, threshold voltage can be obtained easily by using this model. The model predicts the threshold voltage which is the result of 2D numerical device simulation.