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Liu, C.,Minari, T.,Xu, Y.,Yang, B.r.,Chen, H.X.,Ke, Q.,Liu, X.,Hsiao, H.C.,Lee, C.Y.,Noh, Y.Y. Elsevier Science 2015 ORGANIC ELECTRONICS Vol.27 No.-
We explore the device physics of thin film transistors (TFTs) with non-Ohmic contacts and develop a simple and fast method for evaluating the contact properties TFTs through output characteristics. Using one single output scan, the quantitative relationship between contact resistances and drain voltage were evaluated, revealing the property of interfacial injection at non-Ohmic contacts. This is demonstrated and validated in both TFT simulations and experiments employing inorganic and organic TFTs. The approach can be applied to general TFTs with arbitrary materials and configurations conveniently and enables faster and improved understanding of TFT operation and device physics.
Liu, C.,Xu, Y.,Liu, Z.,Tsao, H.N.,Mullen, K.,Minari, T.,Noh, Y.Y.,Sirringhaus, H. Elsevier Science 2014 Organic Electronics Vol.15 No.8
Solution-processed n-type organic field effect transistors (OFETs) are in need of proper metal contact for improving injection and mobility, as well as balanced hole mobility for building logic circuit units. We address the two distinct problems by a simple technique of transfer-printing. Transfer-printed Au contacts on a terrylene-based semiconductor (TDI) significantly reduced the inverse subthreshold slope by 5.6V/dec and enhanced the linear mobility by over 5 times compared to evaporated Au contacts. Hence, devices with a high-work-function metal (Au) are comparable with those with low-work-function metals (Al and Ca), indicating a fundamental advantage of transfer-printed electrodes in electron injection. We also transfer-printed a poly(3-hexylthiophene) (P3HT) layer onto TDI to construct a double-channel ambipolar transistor by a solution process for the first time. The transistor exhibits balanced hole and electron mobility (3.0x10<SUP>-3</SUP> and 2.8x10<SUP>-3</SUP>cm<SUP>2</SUP>V<SUP>-1</SUP>s<SUP>-1</SUP>) even in a coplanar structure with symmetric Au electrodes. The technique is especially useful for reaching intrinsic mobility of new materials, and enables significant enlargement of the material tanks for solution-processed functional heterojunction OFETs.
K.Shinohara,Y.Minari,T.Irisa 전력전자학회 1992 ICPE(ISPE)논문집 Vol.1992 No.4
The voltage source inverter without dc link components does not have electrolytic capacitor and reactor (or resistor). The main circuit consists of inverter,rectifier and ac filter. The rectifier is the three phase bridge connections of 120° duration, and each diode has the antiparallel connected GTO for the reverse current flow path. This paper describes the analytical method and the calculated results on the stability of this system. The dc link voltage of the inverter takes immediately the influence of the ac source voltages. The stability analysis is performed by means of state variable method in consideration of the ac source voltages. In the equation of the small perturbations on the state variable from steady state, the stability is estimated by the dominant root in eigenvalues analysis. The stable and unstable characteristics with constant V/f control of induction motor are similar to the conventional voltage source inverter.<br/>