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Zhuoqi Li,Shuhuan Liu,Xiaotang Ren,Mathew Adefusika Adekoya,Jun Zhang,Shuangying Liu 한국원자력학회 2022 Nuclear Engineering and Technology Vol.54 No.2
The 3 MeV proton irradiation effects on SiGe low noise amplifier (LNA) (NXP BGU7005) performanceunder different voltage supply VCC (0 V, 2.5 V) conditions were firstly experimental studied in thispresent work. The S parameters including S11, S22, S21, 1 dB compression point and noise figure (NF) of thetest samples under different bias voltage supply were measured and compared before and after 3 MeVproton irradiation. The total proton irradiation fluence was 1 1015 protons/cm2. The maximumdegradation quantities of the gain S21 and NF of the test samples under zero bias are measuredrespectively 1.6 dB and 1.2 dB. Compared with the samples under 2.5 V bias supply, the maximumdegradation of S21 and NF are respectively 1.1 dB and 0.8 dB in the whole frequency band. It is noteworthy that the gain and NF of SiGe LNAs under zero-bias mode suffer enhanced degradation comparedwith those under normal bias supply. The key influence factors are discussed based on the correlation ofthe SiGe device and the LNA circuit. Different process of the ionization damage and displacement damageunder zero-bias and 2.5 V bias voltage supply contributed to the degradation difference. The underlyingphysical mechanisms are analyzed and investigated