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Trilayer Tunnel Selectors for Memristor Memory Cells
Choi, Byung Joon,Zhang, Jiaming,Norris, Kate,Gibson, Gary,Kim, Kyung Min,Jackson, Warren,Zhang, Minx2010,Xian Max,Li, Zhiyong,Yang, J. Joshua,Williams, R. Stanley John Wiley and Sons Inc. 2016 Advanced Materials Vol.28 No.2
<P><B>An integrated memory cell with a memristor</B> and a trilayer crested barrier selector, showing repeatable nonlinear current–voltage switching loops is presented. The fully atomic‐layer‐deposited TaN<SUB>1+x</SUB>/Ta<SUB>2</SUB>O<SUB>5</SUB>/TaN<SUB>1+x</SUB> crested barrier selector yields a large nonlinearity (>10<SUP>4</SUP>), high endurance (>10<SUP>8</SUP>), low variability, and low temperature dependence. </P>