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Study of Ge Surface Passivation using Radical Nitridation Technique for Ge Channel MOS Transistors
Kimihiko Kato,Hiroki Kondo,Mitsuo Sakashita,Wakana Takeuchi,Osamu Nakatsuka,Shigeaki Zaima 한국표면공학회 2010 한국표면공학회 학술발표회 초록집 Vol.2010 No.11
We have investigated the germanium (Ge) surface passivation using radical nitridation technique for future Ge channel metal-oxide-semiconductor field effect transistors (MOSFETs). Stoichiometric Ge-nitride (Ge₃N₄) is formed at a nitride temperature ranging from 50 to 510℃, and the thickness of Ge3N4 tend to saturate with the nitridation time. The minimum value of the leakage current density of Au/Ge₃N₄/Ge metal-insulator-semiconductor (MIS) capacitors is realized at a nitridation temperature of 300℃. In the Pr-oxide/Ge₃N₄/Ge MOS capacitor, the degradation of electrical properties with annealing is effectively suppressed by the introduction of the Ge₃N₄ passivation layer, and we can achieve the small interface state density as low as 4×10¹¹ eV?¹㎝?².