http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
- 中文 을 입력하시려면 zhongwen을 입력하시고 space를누르시면됩니다.
- 北京 을 입력하시려면 beijing을 입력하시고 space를 누르시면 됩니다.
RISS 인기검색어
- 검색키워드
- 저자 : Uribe-Romo, Fernando J. (검색결과 1 건)
- 무료
- 기관 내 무료
- 유료
-
Furukawa, Hiroyasu,Go, Yong Bok,Ko, Nakeun,Park, Young Kwan,Uribe-Romo, Fernando J.,Kim, Jaheon,O’Keeffe, Michael,Yaghi, Omar M. American Chemical Society 2011 Inorganic Chemistry Vol.50 No.18
<P>The concept and occurrence of isoreticular (same topology) series of metal–organic frameworks (MOFs) is reviewed. We describe the preparation, characterization, and crystal structures of three new MOFs that are isoreticular expansions of known materials with the <B>tbo</B> (Cu<SUB>3</SUB>(4,4′,4″-(benzene-1,3,5-triyl-tris(benzene-4,1-diyl))tribenzoate)<SUB>2</SUB>, MOF-399) and <B>pto</B> topologies (Cu<SUB>3</SUB>(4,4′,4″-(benzene-1,3,5-triyl-tribenzoate)<SUB>2</SUB>, MOF-143; Cu<SUB>3</SUB>(4,4′,4″-(triazine-2,4,6-triyl-tris(benzene-4,1-diyl))tribenzoate)<SUB>2</SUB>, MOF-388). One of these materials (MOF-399) has a unit cell volume 17 times larger than that of the first reported material isoreticular to it, and has the highest porosity (94%) and lowest density (0.126 g cm<SUP>–3</SUP>) of any MOFs reported to date.</P><P>Syntheses of three new metal−organic frameworks (MOFs) that are isoreticular (same topology) expansions of known materials with the <B>tbo</B> and <B>pto</B> topologies are reported. One of these materials (MOF-399) has a unit cell volume 17 times larger than that of the first reported material isoreticular to it, and has the highest void fraction (94%) and lowest density (0.126 g cm<SUP>−3</SUP>) of any MOFs reported to date.</P><P><B>Graphic Abstract</B> <IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/inocaj/2011/inocaj.2011.50.issue-18/ic201376t/production/images/medium/ic-2011-01376t_0007.gif'></P><P><A href='http://pubs.acs.org/doi/suppl/10.1021/ic201376t'>ACS Electronic Supporting Info</A></P><P><A href='http://pubs.acs.org/doi/suppl/10.1021/ic201376t'>ACS Electronic Supporting Info</A></P>
연관 검색어 추천
이 검색어로 많이 본 자료
활용도 높은 자료
