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Deterministic coupling of quantum emitters in WSe<sub>2</sub> monolayers to plasmonic nanocavities
Iff, Oliver,Lundt, Nils,Betzold, Simon,Tripathi, Laxmi Narayan,Emmerling, Monika,Tongay, Sefaattin,Lee, Young Jin,Kwon, Soon-Hong,Hö,fling, Sven,Schneider, Christian The Optical Society 2018 Optics express Vol.26 No.20
Imaging of pure spin-valley diffusion current in WS<sub>2</sub>-WSe<sub>2</sub> heterostructures
Jin, Chenhao,Kim, Jonghwan,Utama, M. Iqbal Bakti,Regan, Emma C.,Kleemann, Hans,Cai, Hui,Shen, Yuxia,Shinner, Matthew James,Sengupta, Arjun,Watanabe, Kenji,Taniguchi, Takashi,Tongay, Sefaattin,Zettl, A American Association for the Advancement of Scienc 2018 Science Vol.360 No.6391
<P>Transition metal dichalcogenide (TMDC) materials are promising for spintronic and valleytronic applications because valley-polarized excitations can be generated and manipulated with circularly polarized photons and the valley and spin degrees of freedom are locked by strong spin-orbital interactions. In this study we demonstrate efficient generation of a pure and locked spin-valley diffusion current in tungsten disulfide (WS2)-tungsten diselenide (WSe2) heterostructures without any driving electric field. We imaged the propagation of valley current in real time and space by pump-probe spectroscopy. The valley current in the heterostructures can live for more than 20 microseconds and propagate over 20 micrometers; both the lifetime and the diffusion length can be controlled through electrostatic gating. The high-efficiency and electric-field-free generation of a locked spin-valley current in TMDC heterostructures holds promise for applications in spin and valley devices.</P>
Suh, Joonki,Park, Tae-Eon,Lin, Der-Yuh,Fu, Deyi,Park, Joonsuk,Jung, Hee Joon,Chen, Yabin,Ko, Changhyun,Jang, Chaun,Sun, Yinghui,Sinclair, Robert,Chang, Joonyeon,Tongay, Sefaattin,Wu, Junqiao American Chemical Society 2014 NANO LETTERS Vol.14 No.12
<P>Layered transition metal dichalcogenides (TMDs) draw much attention as the key semiconducting material for two-dimensional electrical, optoelectronic, and spintronic devices. For most of these applications, both <I>n</I>- and <I>p</I>-type materials are needed to form junctions and support bipolar carrier conduction. However, typically only one type of doping is stable for a particular TMD. For example, molybdenum disulfide (MoS<SUB>2</SUB>) is natively an <I>n</I>-type presumably due to omnipresent electron-donating sulfur vacancies, and stable/controllable <I>p</I>-type doping has not been achieved. The lack of <I>p</I>-type doping hampers the development of charge-splitting <I>p</I>–<I>n</I> junctions of MoS<SUB>2</SUB>, as well as limits carrier conduction to spin-degenerate conduction bands instead of the more interesting, spin-polarized valence bands. Traditionally, extrinsic <I>p</I>-type doping in TMDs has been approached with surface adsorption or intercalation of electron-accepting molecules. However, practically stable doping requires substitution of host atoms with dopants where the doping is secured by covalent bonding. In this work, we demonstrate stable <I>p</I>-type conduction in MoS<SUB>2</SUB> by substitutional niobium (Nb) doping, leading to a degenerate hole density of ∼3 × 10<SUP>19</SUP> cm<SUP>–3</SUP>. Structural and X-ray techniques reveal that the Nb atoms are indeed substitutionally incorporated into MoS<SUB>2</SUB> by replacing the Mo cations in the host lattice. van der Waals <I>p</I>–<I>n</I> homojunctions based on vertically stacked MoS<SUB>2</SUB> layers are fabricated, which enable gate-tunable current rectification. A wide range of microelectronic, optoelectronic, and spintronic devices can be envisioned from the demonstrated substitutional bipolar doping of MoS<SUB>2</SUB>. From the miscibility of dopants with the host, it is also expected that the synthesis technique demonstrated here can be generally extended to other TMDs for doping against their native unipolar propensity.</P><P><B>Graphic Abstract</B> <IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/nalefd/2014/nalefd.2014.14.issue-12/nl503251h/production/images/medium/nl-2014-03251h_0005.gif'></P><P><A href='http://pubs.acs.org/doi/suppl/10.1021/nl503251h'>ACS Electronic Supporting Info</A></P>
Tuning the optical and electrical properties of MoS<sub>2</sub> by selective Ag photo-reduction
Kim, Eunpa,Lee, Yoonkyung,Ko, Changhyun,Park, Yunjeong,Yeo, Junyeob,Chen, Yabin,Choe, Hwan Sung,Allen, Frances I.,Rho, Junsuk,Tongay, Sefaattin,Wu, Junqiao,Kim, Kyunghoon,Grigoropoulos, Costas P. American Institute of Physics 2018 APPLIED PHYSICS LETTERS Vol.113 No.1