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Himeli Chakrabarti,Reshmi Maity,Tijana Kevkić,Vladica Stojanović,N. P. Maity 한국전기전자재료학회 2021 Transactions on Electrical and Electronic Material Vol.22 No.4
This article is about an elaborative description of two dimensional investigative mathematical structure of fully depleted graded channel (GC) dual-material-double-gate (DMDG) silicon-on-insulator metal–oxide–semiconductor-fi eld-eff ecttransistor (SOI MOSFET). The surface potential contours in addition with electric field variation throughout the channel establish reduction of short-channel-effects (SCEs). To get better operational analysis, some new characteristics such as temperature effect and interface charge eff ects have been incorporated in the model. In this representation we also incorporate the consequences of high-k dielectric medium HfO2 instead of SiO2 and have made a comparison with the effect in various frameworks. In the GC DMDG composition, the surface potential as well as electric field throughout the channel shows close to step function variations which help to defeat the hot carrier along with drain-induced-barrier-lowering (DIBL) effects. As an outcome, the structure shows that the surface potential profi le increases by using GC DMDG structure over DMDG. All these outcomes of the proposed analytical representation have been compared by TCAD simulation consequence. Very good conformity is observed between them.
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