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RISS 인기검색어
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- 저자 : Takenari Goto (검색결과 3 건)
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Waveguide lasing from V-shaped ZnO microstructure.
Lee, Sang Hyun,Goto, Takenari,Miyazaki, Hiroshi,Yao, Takafumi Optical Society of America 2013 Optics letters Vol.38 No.14
<P>A V-shaped optical resonance cavity was obtained from ZnO microstructures grown by thermal chemical vapor deposition. Strong laser emissions were observed in three regions--the tip of the two branches and the bottom facet of the V-shaped microstructures--under UV laser excitation at room temperature. In the region where the diameter of the branches was smaller than the wavelength of the laser light, light could not propagate into the tip due to the cutoff phenomenon, resulting in partial reflection. Quasi-Fabry-Perot resonance in the branch and light reflection at the bottom facet characterized the V-shaped microcavity.</P>
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Optical Resonant Cavity in a Nanotaper
Lee, Sang Hyun,Goto, Takenari,Miyazaki, Hiroshi,Chang, Jiho,Yao, Takafumi American Chemical Society 2010 NANO LETTERS Vol.10 No.6
<P>The present study describes an optical resonant cavity in a nanotaper with scale reduction from micro to several nanometers. Both experimental results and a finite-difference time-domain (FDTD)-based simulation suggested that the nanometer-scale taper with a diameter similar to the wavelength of light acted as a mirror, which facilitated the formation of a laser cavity and caused lasing in ZnO nanotapers. As the light inside the nanotaper propagated toward the apex, the lateral mode was reduced and reflection occurred. This report suggests that use of the resonant optical cavities in nanotapers might result in novel active and passive optical components, which will broaden the horizons of photonic technology.</P><P><B>Graphic Abstract</B> <IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/nalefd/2010/nalefd.2010.10.issue-6/nl100100z/production/images/medium/nl-2010-00100z_0003.gif'></P><P><A href='http://pubs.acs.org/doi/suppl/10.1021/nl100100z'>ACS Electronic Supporting Info</A></P><P><A href='http://pubs.acs.org/doi/suppl/10.1021/nl100100z'>ACS Electronic Supporting Info</A></P><P><A href='http://pubs.acs.org/doi/suppl/10.1021/nl100100z'>ACS Electronic Supporting Info</A></P><P><A href='http://pubs.acs.org/doi/suppl/10.1021/nl100100z'>ACS Electronic Supporting Info</A></P>
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ZnO를 이용한 GaN 자립형 기판의 제작에 관한 연구
김시영,정미나,이삼녕,장지호,이현재,Katsushi Fujii,Takenari Goto,Takafumi Yao,박승환,이웅,Takashi Sekiguchi 한국물리학회 2010 새물리 Vol.60 No.4
A new hydride vapor phase epitaxy (HVPE)-based approach to the fabrication of freestanding GaN (FS-GaN) substrates was investigated. For the direct formation of low-temperature GaN (LT-GaN) layers, the growth parameters (the polarity of ZnO, the growth temperature, and the V/III ratio) were optimized. The FS-GaN layer was achieved by gas etching (900℃, NH₃) in an HVPE reactor. The fabrication of a thin (80 ㎛) FS-GaN film on a FS-GaN (LT) seed substrate to improve the quality further is discussed. 간단한 공정을 이용한 자립형 GaN 기판 제작을 위하여 PAMBE(Plasma Assisted Molecular Beam Epitaxy)법으로 성장한 ZnO 희생층 상에, HVPE(Hydride Vapor Phase Epitaxy)법으로 GaN를 직접 성장하고, HVPE 반응로 안에서 기상 식각을 시도하여 GaN와 사파이어 기판을 분리하고 그 위에 고온에서 GaN 후막을 재 성장하는 방법을 제안하였다. ZnO-희생층 상에 저온 GaN를 직접 성장하기 위해서, ZnO-희생층의 극성, GaN의 성장 온도 및 V/III ratio를 최적화하였고, 설정된 조건에서 성장한 저온 GaN와 사파이어 기판을 고온 가스 식각을 (900℃, NH₃) 통하여 분리하였으며, 그위에 80 ㎛의 두께를 가지는 자립형 GaN 기판을 제작하여 결정성을 고찰 하였다.
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