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Sharma, R.,Sagade, A.A.,Gosavi, S.R.,Gudage, Y.G.,Ghosh, A.,Kulariya, P.,Sulaniya, I.,Mane, R.S.,Han, S.H. North-Holland 2009 Journal of non-crystalline solids Vol.355 No.31
The copper chalcogenide (CuX, X=S, Se) thin films have been irradiated with 100MeV gold swift heavy ions (SHI) at 10<SUP>11</SUP> and 10<SUP>12</SUP> ions/cm<SUP>2</SUP> fluences. The irradiation effects were probed by characterizing physical properties such as XRD, AFM, optical band gap and electrical resistivity of copper chalcogenide thin films. The increase in irradiation fluence increases the particle size, electrical conductivity and PL intensity of the materials, and the optical band edges were red shifted. The results are explained by quantifying electronic energy loss of ions in both the materials.