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CMOS-compatible batch processing of monolayer MoS<sub>2</sub> MOSFETs
Xiong, Kuanchen,Kim, Hyun,Marstell, Roderick J,Gö,ritz, Alexander,Wipf, Christian,Li, Lei,Park, Ji-Hoon,Luo, Xi,Wietstruck, Matthias,Madjar, Asher,Strandwitz, Nicholas C,Kaynak, Mehmet,Lee, Young IOP 2018 Journal of Physics. D, Applied Physics Vol.51 No.15
<P>Thousands of high-performance 2D metal-oxide-semiconductor field effect transistors (MOSFETs) were fabricated on wafer-scale chemical vapor deposited MoS<SUB>2</SUB> with fully-CMOS-compatible processes such as photolithography and aluminum metallurgy. The yield was greater than 50% in terms of effective gate control with less-than-10 V threshold voltage, even for MOSFETs having deep-submicron gate length. The large number of fabricated MOSFETs allowed statistics to be gathered and the main yield limiter to be attributed to the weak adhesion between the transferred MoS<SUB>2</SUB> and the substrate. With cut-off frequencies approaching the gigahertz range, the performances of the MOSFETs were comparable to that of state-of-the-art MoS<SUB>2</SUB> MOSFETs, whether the MoS<SUB>2</SUB> was grown by a thin-film process or exfoliated from a bulk crystal.</P>