http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
- 中文 을 입력하시려면 zhongwen을 입력하시고 space를누르시면됩니다.
- 北京 을 입력하시려면 beijing을 입력하시고 space를 누르시면 됩니다.
RISS 인기검색어
- 검색키워드
- 저자 : Sinkar, A. (검색결과 2 건)
- 무료
- 기관 내 무료
- 유료
-
Sinkar, A.,Taejoon Park,Nam Sung Kim IEEE 2013 IEEE transactions on very large scale integration Vol.21 No.3
<P>In an integrated circuit (IC) adopting a power-gating (PG) technique, the virtual supply voltage (VVDD) is susceptible to: 1) negative-bias temperature instability (NBTI) degradation that weakens the PG device over time and 2) temporal temperature variation that affects active leakage current (thus total current) of the IC. The PG device is sized to guarantee a minimum VVDD level over the chip lifetime. Thus, the NBTI degradation and the worst-case total current at high-temperature must be considered for sizing the PG device. This leads to higher VVDD (thus active leakage power) than necessary in early chip lifetime and/or at low temperature, negatively impacting the gate-oxide reliability of transistors. To reduce active leakage power increase and improve the gate-oxide reliability due to these effects, we propose two techniques that adjust the strength of a PG device based on its usage and IC's temperature at runtime. We demonstrate the efficacy of these techniques with an experimental setup using a 32-nm technology model in the presence of within-die spatial process and temperature variations. On an average of 100 die samples, they can reduce dynamic and active leakage power by up to 3.7% and 10% in early chip lifetime. Finally, these techniques also reduce the oxide failure rate by up to 5% across process corners over a period of 7 years.</P>
-
Maximizing Frequency and Yield of Power-Constrained Designs Using Programmable Power-Gating
Nam Sung Kim,Sinkar, A.,Jun Seomun,Youngsoo Shin IEEE 2012 IEEE transactions on very large scale integration Vol.20 No.10
<P>A large spread of leakage power due to process variations impacts the total power consumption of integrated circuits (ICs) substantially. This in turn may reduce frequency and/or yield of power-constrained designs. Facing such challenges, we propose two methods using power-gating (PG) devices whose effective width can be adjusted during a post-silicon tuning process. In the first method, we consider processors exhibiting substantial core-to-core frequency and leakage power variations while only a global voltage/frequency domain is supported. Since each core in a processor often has its own PG device, the total width each PG device and the global voltage are tuned jointly to maximize the global frequency for a given power constraint. Our experiment demonstrates that the maximum frequency of 2-, 4-, 8-, and 16-core processors is improved by 5%-21%. In the second method, we take rejected dies due to excessive leakage power. We adjust the width of PG devices such that the dies satisfy their given power constraint. Our experiment shows that 88%-98% of discarded dies violating their power constraint are recovered.</P>
연관 검색어 추천
이 검색어로 많이 본 자료
활용도 높은 자료
