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RISS 인기검색어
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- 저자 : Shun-Ichiro Tanaka (검색결과 3 건)
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Carbon nanofiber bundles grown by plasma enhanced chemical vapor deposition
Norihiro Shimoi,Shun-ichiro Tanaka 한양대학교 세라믹연구소 2008 Journal of Ceramic Processing Research Vol.9 No.5
A bundle of carbon nanofibers (CNFs) was successfully obtained on a glass substrate through a plasma enhanced chemical vapor deposition (PECVD) process. CNFs having dimensions of 100 nm in diameter and 1 μm in length nucleated on the Ni- Cr catalysis and grew selectively in a circular area 3 μm in diameter with a number density of 50 in 1 μm2. PECVD was used with mixed source gases of CH4/H2/He and a substrate temperature of less than 743 K which was lower than the transition temperature of glass substrate. Each CNF had a nanostructure of a stacked cup-cone shaped graphite shells with a Ni-Cr nanoparticle surmounted at the top. The field emission characteristics of the CNF bundle were also evaluated up to 3 μA at 130 V and the maximum in the current-voltage relation was converted to a Fowler-Nordheim (F-N) plot using a work function value of 5.0 eV for CNF which showed an explicit linear F-N relation. This means a CNF bundle is a candidate element for two dimensional field emitter devices. A bundle of carbon nanofibers (CNFs) was successfully obtained on a glass substrate through a plasma enhanced chemical vapor deposition (PECVD) process. CNFs having dimensions of 100 nm in diameter and 1 μm in length nucleated on the Ni- Cr catalysis and grew selectively in a circular area 3 μm in diameter with a number density of 50 in 1 μm2. PECVD was used with mixed source gases of CH4/H2/He and a substrate temperature of less than 743 K which was lower than the transition temperature of glass substrate. Each CNF had a nanostructure of a stacked cup-cone shaped graphite shells with a Ni-Cr nanoparticle surmounted at the top. The field emission characteristics of the CNF bundle were also evaluated up to 3 μA at 130 V and the maximum in the current-voltage relation was converted to a Fowler-Nordheim (F-N) plot using a work function value of 5.0 eV for CNF which showed an explicit linear F-N relation. This means a CNF bundle is a candidate element for two dimensional field emitter devices.
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SiC nanowires formed by high energy ion beam irradiation to polymer films and heating
Satoshi Tsukuda,Shu Seki,Masaki Sugimoto,Seiichi Tagawa,Shun-Ichiro Tanaka 한양대학교 세라믹연구소 2008 Journal of Ceramic Processing Research Vol.9 No.5
Ion bombardment can release densely active intermediates within a cylindrical area along the passage of a single ion. The cylindrical area, in which high-energy is deposited from projectile ion, is sometimes called an “ion track”. The high energy charged particle irradiation of a polycarbosilane (PCS) film causes cross-linking reactions, leading to the formation of a polymer gel containing cylindrical nanostructures (nanowires). The diameter and length of the nanowires were completely controlled by changing several parameters. PCS is also a well-known a precursor of silicon carbide (SiC), and the PCS nanowires formed by the present techniques were heated at 1,000 oC in Ar gas. A SiC ceramic wire, which has a higher heat resistance than polymers, was obtained on a Si substrate by conversion from the PCS nanowires. In this paper, the crystal structure and phase of the SiC nanowires obtained are discussed. Ion bombardment can release densely active intermediates within a cylindrical area along the passage of a single ion. The cylindrical area, in which high-energy is deposited from projectile ion, is sometimes called an “ion track”. The high energy charged particle irradiation of a polycarbosilane (PCS) film causes cross-linking reactions, leading to the formation of a polymer gel containing cylindrical nanostructures (nanowires). The diameter and length of the nanowires were completely controlled by changing several parameters. PCS is also a well-known a precursor of silicon carbide (SiC), and the PCS nanowires formed by the present techniques were heated at 1,000 oC in Ar gas. A SiC ceramic wire, which has a higher heat resistance than polymers, was obtained on a Si substrate by conversion from the PCS nanowires. In this paper, the crystal structure and phase of the SiC nanowires obtained are discussed.
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