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Shogo Ishizuka,Akimasa Yamada,Koji Matsubara,Paul Fons,Keiichiro Sakurai,Shigeru Niki 한국물리학회 2010 Current Applied Physics Vol.10 No.2
CuInSe2 (CIS), Cu(In,Ga)Se2 (CIGS), and CuGaSe2 (CGS) solar cells were fabricated on flexible 50-lm thick zirconia sheet substrates. Alkali doping into CIS, CIGS, and CGS absorber layers was demonstrated using alkali-silicate glass thin layers (ASTL) deposited on substrates prior to the sputtering of the Mo back contact layer. Enhanced cell efficiencies with the use of ASTL were demonstrated regardless of the In/Ga composition ratio in CIGS. The external quantum efficiency (EQE) curves of CIGS solar cells fabricated with ASTL showed an enhanced absorption in the long wavelength region, whereas the EQE curves of CIS and CGS cells showed no such variation. This result implies that the presence of alkali elements in CIGS lead to a reduction in elemental inter-diffusion of In and Ga during growth, resulting in a decrease of the nominal band-gap energy of the CIGS layer due to the steep Ga composition gradient present in the CIGS layer.
Improving the performance of pure sulfide Cu(InGa)S2 solar cells via injection annealing system
권일영,Nagai Takehiko,Ishizuka Shogo,Tampo Hitoshi,Shibata Hajime,김신호,김양도 한국물리학회 2021 Current Applied Physics Vol.22 No.-
In this study, we present an effective method of improving the performance of pure sulfide Cu(InGa)S2 (CIGS) solar cells via injection annealing system. The injection annealing system can perform annealing at desired temperatures, and therefore, the CIGS thin film passed over the temperature range in which secondary phases occurs. Via the injection annealing system, secondary phase InSx was effectively removed from the surface of the CIGS thin films at the temperatures over 550◦C. This resulted in the formation of good-quality P–N junction CIGS devices, thereby improving significantly the performance of the CIGS solar cell. In addition, the open-circuitvoltage (VOC) and fill factor (FF) of the CIGS devices increased gradually with increasing annealing temperature in the range of 550–640◦C. It is speculated that the bulk defects were decreased as the annealing temperature increased. Finally, via injection annealing system, a pure sulfide CIGS solar cell with an efficiency of 12.16% was achieved.