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S. K. Pradhan,S. N. Das,S. Bhuyan,Seshadev Sahoo,R. N. P. Choudhary 한국전기전자재료학회 2020 Transactions on Electrical and Electronic Material Vol.21 No.2
Multiferroic gadolinium (Gd) doped BiFeO 3 (BFO) and PbTiO 3 (PT) samples [(Pb 1−x Bi 0.5x Gd 0.5x )(Fe x Ti 1−x )O 3 ] with x = 0.1, 0.3, 0.5 and 0.7 are formulated by adopting the solid state reaction process. The impact of gadolinium substitution in the crystal structure, morphological behavior and electrical properties has been studied. By altering the Gd concentration in the solid solution a change in the structure is observed that is from tetragonal to rhombohedral. The size of the grain in the compounds reduces as a result of enrich in gadolinium content of the furnished sample. The subsidence of lead minimizes the toxic behavior of the material with significant improvements in dielectric response of gadolinium modifi ed BiFeO3 – PbTiO 3synthesized system. From the impedance study, the material presents negative temperature coefficient of resistance characteristics and the impedance is due to the presence of grain and grain boundary eff ect inside the materials. It is realized that the remnant polarization decreases and frequency dependent ac conductivity increases with the concentration of gadolinium in the electronic system. From conductivity study, the equipped electronic materials show non-exponential type of conductivity relaxation.
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