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Kwon, Ji-Hwan,Meng, Yifei,Wu, Lijun,Zhu, Yimei,Zhang, Yifei,Selvamanickam, Venkat,Welp, Ulrich,Kwok, Wai-Kwong,Zuo, Jian-Min IOP 2018 Superconductor science & technology Vol.31 No.10
<P>In YBa<SUB>2</SUB>Cu<SUB>3</SUB>O<SUB>7−<I>δ</I> </SUB> (YBCO), heavy-ion irradiation creates continuous amorphous tracks that are highly effective for vortex pinning. However, the electronic structure landscape of defects and consequently their vortex pinning roles are unclear. Here, we show double chain layer (DCL) defects which intersect the columnar tracks are additionally produced by high energy Pb ion irradiation in YBCO. The DCL defects are ∼29 nm long, about three times the columnar defect diameter. The electronic structures of the DCL and columnar track defects were determined using atomic-resolution scanning transmission electron microscopy (STEM) and high resolution electron energy loss spectroscopy (EELS). Results show a decrease in the oxygen and copper content at the interface between the track and the YBCO matrix, resulting in interfacial strain. For the DCL defects, the STEM/EELS study revealed a localized electron doped CuO<SUB>2</SUB> plane next to the DCL defect. The DCL defects thus further extend the electronic inhomogeneity into YBCO.</P>
Numerical Simulation for Operation of Flexible Thin-Film Transistors With Bending
Asadirad, Mojtaba,Pouladi, Sara,Shervin, Shahab,Oh, Seung Kyu,Lee, Keon Hwa,Kim, Jeomoh,Lee, Sung-Nam,Gao, Ying,Dutta, Pavel,Selvamanickam, Venkat,Ryou, Jae-Hyun IEEE 2017 IEEE electron device letters Vol.38 No.2
<P>We theoretically study the change of the performance characteristics with various mechanical bending conditions for flexible thin-film transistors (TFTs) by two-dimensional device simulation. The characteristics of newly developed flexible TFTs with high crystalline quality and high carriermobility aremore sensitive to the degree of bending. We developed a model to estimate the change in the characteristics as a function of curvature radius of the channel with a focus on scattering of carriers in a bent TFT. Field-effectmobility decreases by bending, e.g., similar to 11% with a radius at R = 30 mm and a knee voltage increases, while a threshold voltage remains the same. This model can be extended to other flexible TFTs with bending.</P>