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Lee, Y.J.,Lee, S.H.,Schropp, R.E.I.,Lee, K.S.,Lim, J.W.,Yun, S.J. Pergamon Press 2016 International journal of hydrogen energy Vol.41 No.15
<P>The effects of multi-layered p-type microcrystalline (mu c-) Si:H windows on the performance of substrate-type amorphous Si:H thin film solar cells on opaque substrates were investigated. The results were well explained in terms of H-2-plasma-induced damage (HPID) at the p/i-interface and the near-interface region of the light-absorbing layer. The mu c-Si:H was deposited using plasma enhanced chemical vapor deposition in a H-2-rich atmosphere. A high microcrystalline volume fraction was obtained with a high H-2 dilution ratio, which can cause considerable HPID. Cell efficiency was enhanced with a multi-layered p-type mu c-Si:H composed of films with low and high crystalline volume fraction, compared to cells with single-layered mu c-Si:H. In the multi-layered p-type mu c-Si:H, the low crystalline film was placed on an i-Si:H layer to reduce HPID. The present work demonstrated that HPID was reduced at the p/i-interface and the near-interface region of the light-absorbing layer, and that the quality of the p-type mu c-Si:H needs to be a significant consideration to achieve high efficiency. Copyright (C) 2016, Hydrogen Energy Publications, LLC. Published by Elsevier Ltd. All rights reserved.</P>
Islam, Md Ashraful,Kim, Jung Han,Schropp, Anthony,Kalita, Hirokjyoti,Choudhary, Nitin,Weitzman, Dylan,Khondaker, Saiful I.,Oh, Kyu Hwan,Roy, Tania,Chung, Hee-Suk,Jung, Yeonwoong American Chemical Society 2017 NANO LETTERS Vol.17 No.10
<P>Two-dimensional (2D) transition metal dichalcogenides (TMDs) such as molybdenum or tungsten disulfides (MoS2 or WS2) exhibit extremely large in-plane strain limits and unusual optical/electrical properties, offering unprecedented opportunities for flexible electronics/optoelectronics in new form factors. In order for them to be technologically viable building-blocks for such emerging technologies, it is critically demanded to grow/integrate them onto flexible or arbitrary shaped substrates on a large wafer-scale compatible with the prevailing microelectronics processes. However, conventional approaches to assemble them on such unconventional substrates via mechanical exfoliations or coevaporation chemical growths have been limited to small-area transfers of 2D TMD layers with uncontrolled spatial homogeneity. Moreover, additional processes involving a prolonged exposure to strong chemical etchants have been required for the separation of as-grown 2D layers, which is detrimental to their material properties. Herein, we report a viable strategy to universally combine the centimeter-scale growth of various 2D TMD layers and their direct assemblies on mechanically deformable substrates. By exploring the water-assisted debonding of gold (Au) interfaced with silicon dioxide (SiO2), we demonstrate the direct growth, transfer, and integration of 2D TMD layers and heterostructures such as 2D MoS2 and 2D MoS2/WS2 vertical stacks on centimeter-scale plastic and metal foil substrates. We identify the dual function of the Au layer as a growth substrate as well as a sacrificial layer which facilitates 2D layer transfer. Furthermore, we demonstrate the versatility of this integration approach by fabricating centimeter-scale 2D MoS2/single walled carbon nanotube (SWNT) vertical heterojunctions which exhibit current rectification and photoresponse. This study opens a pathway to explore large-scale 2D TMD van der Waals layers as device building blocks for emerging mechanically deformable electronics/optoelectronics.</P>
Double-layered Ag-Al back reflector on stainless steel substrate for a-Si:H thin film solar cells
Jung, K.H.,Yun, S.J.,Lee, S.H.,Lee, Y.J.,Lee, K.S.,Lim, J.W.,Kim, K.B.,Kim, M.,Schropp, R.E.I. North-Holland ; Elsevier Science Ltd 2016 Solar energy materials and solar cells Vol.145 No.3
An effective light trapping method for substrate-type hydrogenated amorphous silicon (a-Si:H) thin film solar cells is the use of a back reflector (BR) of high roughness, e.g., 'hot silver', which is deposited at temperatures higher than 450<SUP>o</SUP>C. In this work, textured silver-aluminum (Ag-Al) BR films were fabricated by depositing Ag on Al film at Ag-deposition temperatures (T<SUB>Ag</SUB>) ranging from 25 to 350<SUP>o</SUP>C. The surface morphology and roughness of Ag-Al films were strongly affected by T<SUB>Ag</SUB>. The Al and Ag films were formed entirely of Ag<SUB>2</SUB>Al alloy at T<SUB>Ag</SUB> of 330<SUP>o</SUP>C or higher, while the Ag-Al films maintained a double-layered structure at 290<SUP>o</SUP>C or below. Although the films did not undergo alloying at T<SUB>Ag</SUB> of 290<SUP>o</SUP>C, the Ag-Al films have a well-developed surface structure with high diffuse-reflectance, compared to Ag films deposited at the same temperature. The conversion efficiency of an a-Si:H thin film solar cell on a flexible stainless steel substrate increased from 7.63% to 8.44% as T<SUB>Ag</SUB> was increased from 25 to 290<SUP>o</SUP>C, as a result of more effective light scattering by Ag-Al BRs, producing increased short-circuit current. However, at higher T<SUB>Ag</SUB>, Ag<SUB>2</SUB>Al alloy films with sharp crystallite edges were formed, and were not appropriate as BRs. The present work clearly shows that double-layered Ag-Al films fabricated at temperatures as low as 290<SUP>o</SUP>C could be useful back reflectors for substrate-type thin film solar cells.