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Yoon, Im Taek,Lee, Sejoon,Roshchupkin, Dmitry V.,Panin, Gennady N. American Scientific Publishers 2018 Journal of Nanoscience and Nanotechnology Vol.18 No.6
<P>The influence of quantum well structure and growth temperature on a synthesized multilayer system composed of a five-layer InMnGaAs quantum well with an InGaAs buffer layer grown on semi-insulating (100)-oriented substrates prepared by low temperature molecular beam epitaxy was studied. The magnetization measurements using a superconducting quantum interference device indicated the existence of ferromagnetism with a Curie temperature above room temperature in the five-layer InGaMnAs quantum well structure with an InGaAs buffer layer in a GaAs matrix. X-ray diffraction and secondary ion mass spectroscopy measurements confirmed the second phase formation of ferromagnetic GaMn clusters. The ferromagnetism that exists in the five-layer of the InMnGaAs quantum well with the InGaAs buffer layer results from a superposition of the ferromagnetism of the low temperature region from the substitutional Mn ions into Ga sites or interstitial Mn ions as well as the presence of manganese ions dopant clusters such as GaMn clusters.</P>
Brzhezinskaya, Maria,Irzhak, Artemii,Irzhak, Dmitry,Kang, Tae Won,Kononenko, Oleg,Matveev, Viktor,Panin, Gennady,Roshchupkin, Dmitry WILEY‐VCH Verlag Berlin GmbH 2016 Physica Status Solidi. Rapid Research Letters Vol.10 No.8
<P>For the first time, a few layer graphene was grown on the surface of the polar <I>X</I> ‐cut (110) of a piezoelectric La<SUB>3</SUB>Ga<SUB>5.5</SUB>Ta<SUB>0.5</SUB>O<SUB>14</SUB> crystal by the CVD method. This polar <I>X</I> ‐cut is characterized by a good matching of the crystal lattice parameters of La<SUB>3</SUB>Ga<SUB>5.5</SUB>Ta<SUB>0.5</SUB>O<SUB>14</SUB> and two‐dimensional graphene crystal, as well as the presence of piezoelectric fields on the surface of the substrate, which could affect the graphene growth process. Raman spectroscopy investigation has shown the ability for direct growth of graphene on the piezoelectric crystal. The NEXAFS spectroscopy studies of the film grown on the surface of the <I>X</I> ‐cut of an La<SUB>3</SUB>Ga5<SUB>.5</SUB>Ta<SUB>0.5</SUB>O<SUB>14</SUB> crystal also confirmed that the grown film is graphene. Moreover, the NEXAFS spectra enable the conclusion that additional electron states are formed as a result of chemical bonding between the atoms of graphene and the substrate which proceeds through hybridization of the valence electron states of the substrate and graphene atoms. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)</P>