http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
Davinder Singh,Rakesh Kumar Sarin 한국전자통신연구원 2019 ETRI Journal Vol.41 No.3
This paper investigates the use of the inverse‐free sparse Bayesian learning (SBL) approach for peak‐to‐average power ratio (PAPR) reduction in orthogonal frequency‐division multiplexing (OFDM)‐based multiuser massive multiple‐input multiple‐output (MIMO) systems. The Bayesian inference method employs a truncated Gaussian mixture prior for the sought‐after low‐PAPR signal. To learn the prior signal, associated hyperparameters and underlying statistical parameters, we use the variational expectation‐maximization (EM) iterative algorithm. The matrix inversion involved in the expectation step (E‐step) is averted by invoking a relaxed evidence lower bound (relaxed‐ELBO). The resulting inverse‐free SBL algorithm has a much lower complexity than the standard SBL algorithm. Numerical experiments confirm the substantial improvement over existing methods in terms of PAPR reduction for different MIMO configurations.
Ayubi, Adil Al,Sukhija, Shikha,Sarin, Rakesh Kumar The Korean Institute of Electrical and Electronic 2017 Transactions on Electrical and Electronic Material Vol.18 No.6
A slotted implantable patch antenna with microstrip feeding is proposed for industrial, scientific, and medical band applications. The result is verified by implanting the antenna in animal tissue. Further, by varying the ground width and introducing a defect into the ground structure, the antenna becomes applicable for worldwide interoperability for microwave access operations. A simulation is performed using Empire XCcel software. An Agilent vector network analyzer is used for analyzing the return loss performance. Simulated and measured results are compared. Antennas with and without defected ground structure both have key advantages including low profile, desirable return loss, good impedance matching and required bandwidth.
Performance Analysis of Normally-on Dual Gate Algan/Gan Hemt
Manisha Rao,Ravi Ranjan,Nitesh Kashyap,Rakesh Kumar Sarin 한국전기전자재료학회 2021 Transactions on Electrical and Electronic Material Vol.22 No.5
This paper presents the novel normally-on dual gate (DG) AlGaN/GaN high electron mobility transistor. At high frequency, the dual gate structure gives superlative immunity over short channel eff ects. Multiple 2DEG channel regions in dual gate AlGaN/GaN HEMT improves the transport characteristics, charge control and gives better linearity. The high carrier mobility and electron saturation velocity contribute to the high switching frequency of DG HEMT. The drain characteristics of single gate HEMT and dual gate HEMT are compared and DG HEMT outstands in drain current. The various analog and linearity parameters are investigated for DG HEMT. The performance analysis provides better transconductance, capacitance, cut off frequency, subthreshold slope and on-resistance simulations represents the potential of DG HEMT. The DG HEMT provides 1100 mA/mm I ON , 550 mS/mm transconductance and 11 GHz cutoff frequency at V gs = 2 V. The high drain current, better transconductance and cutoff frequency results in better sensitivity of device.
Adil Al Ayubi,Shikha Sukhija,Rakesh Kumar Sarin 한국전기전자재료학회 2017 Transactions on Electrical and Electronic Material Vol.18 No.6
A slotted implantable patch antenna with microstrip feeding is proposed for industrial, scientific, and medical bandapplications. The result is verified by implanting the antenna in animal tissue. Further, by varying the ground width andintroducing a defect into the ground structure, the antenna becomes applicable for worldwide interoperability for microwaveaccess operations. A simulation is performed using Empire XCcel software. An Agilent vector network analyzer is used foranalyzing the return loss performance. Simulated and measured results are compared. Antennas with and without defectedground structure both have key advantages including low profile, desirable return loss, good impedance matching andrequired bandwidth.