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RISS 인기검색어
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- 저자 : Rajesh Saha (검색결과 4 건)
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Design of Micromachining Based Patch Antenna to Enhance Performances for RFID Tag Application
Rajesh Saha,Chandan Tilak Bhunia,Santanu Maity 보안공학연구지원센터 2015 International Journal of Future Generation Communi Vol.8 No.1
Antenna is a significant component of wireless communication system. Radio Frequency Identification (RFID) is one of the activities of Automatic Identification (AUID) system which comes under wireless system. To track any object wirelessly in RFID system, antenna acts as the primary and critical component. Radio Frequency (RF) micromachining technology provides an innovative approach in the development of effective antenna. In this paper, initially we present rectangular patch antenna resonant at 40GHz on silicon substrate. In the consecutive step, in order to improve performance of the antenna silicon micromachining has done by etching the substrate between the ground and the patch. Ansoft High Frequency Structure Simulator (HFSS) provides the simulation result and the different performance parameters like gain, return loss, bandwidths etc. are analyzed.
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Analysis of Pull-in-Voltage and Figure-of-Merit of Capacitive MEMS Switch
Saha, Rajesh,Maity, Santanu,Devi, Ngasepam Monica,Bhunia, Chandan Tilak The Korean Institute of Electrical and Electronic 2016 Transactions on Electrical and Electronic Material Vol.17 No.3
Theoretical and graphical analysis of pull-in-voltage and figure of merit for a fixed-fixed capacitive Micro Electromechanical Systems (MEMS) switch is presented in this paper. MEMS switch consists of a thin electrode called bridge suspended over a central line and both ends of the bridge are fixed at the ground planes of a coplanar waveguide (CPW) structure. A thin layer of dielectric material is deposited between the bridge and centre conductor to avoid stiction and provide low impedance path between the electrodes. When an actuation voltage is applied between the electrodes, the metal bridge acquires pull in effect as it crosses one third of distance between them. In this study, we describe behavior of pull-in voltage and figure of merit (or capacitance ratio) of capacitive MEMS switch for five different dielectric materials. The effects of dielectric thicknesses are also considered to calculate the values of pull-in-voltage and capacitance ratio. This work shows that a reduced pull-in-voltage with increase in capacitance ratio can be achieved by using dielectric material of high dielectric constant above the central line of CPW.
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Analysis of Pull-in-Voltage and Figure-of-Merit of Capacitive MEMS Switch
Santanu Maity,Rajesh Saha,Ngasepam Monica Devi,Chandan Tilak Bhunia 한국전기전자재료학회 2016 Transactions on Electrical and Electronic Material Vol.17 No.3
Theoretical and graphical analysis of pull-in-voltage and figure of merit for a fixed-fixed capacitive MicroElectromechanical Systems (MEMS) switch is presented in this paper. MEMS switch consists of a thin electrodecalled bridge suspended over a central line and both ends of the bridge are fixed at the ground planes of a coplanarwaveguide (CPW) structure. A thin layer of dielectric material is deposited between the bridge and centre conductorto avoid stiction and provide low impedance path between the electrodes. When an actuation voltage is appliedbetween the electrodes, the metal bridge acquires pull in effect as it crosses one third of distance between them. Inthis study, we describe behavior of pull-in voltage and figure of merit (or capacitance ratio) of capacitive MEMS switchfor five different dielectric materials. The effects of dielectric thicknesses are also considered to calculate the valuesof pull-in-voltage and capacitance ratio. This work shows that a reduced pull-in-voltage with increase in capacitanceratio can be achieved by using dielectric material of high dielectric constant above the central line of CPW.
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( Aastha Malik ),( Sarama Saha ),( Rajesh K Morya ),( Sanjay K Bhadada ),( Satya V Rana ) 대한소화기기능성질환·운동학회(구 대한소화관운동학회) 2021 Journal of Neurogastroenterology and Motility (JNM Vol.27 No.2
Background/Aims The pathogenesis of gastrointestinal (GI) symptoms in patients with type 2 diabetes mellitus (T2DM) is yet to be delineated clearly. Serotonin, a monoamine neurotransmitter, resides primarily in the gut and plays a vital role in GI system. However, no study has been documented the role of serotonin and serotonin transporter gene (SLC6A4) polymorphism in the development of GI symptoms in T2DM patients. Methods Three hundred diabetes patients attending diabetes clinic at Postgraduate Institute of Medical Education and Research, Chandigarh, and matched healthy controls were enrolled for this study. Plasma from collected blood sample was used for serotonin measurement by enzyme-linked immunosorbent assay method and buffy coat was used for isolation of DNA by phenol chloroform method. Serotonin transporter gene polymorphism was analyzed by polymerase chain reaction method. Results The frequency of short allele (S) and SS genotype was significantly higher in patients with T2DM than controls and was associated with increased risk of T2DM. The frequency of LS genotype showed an association with protection from the disease. Regarding GI symptoms, 78.2% of patients with constipation showed LL and LS genotypes, and 97.7% of patients with diarrhea had SS genotype. The patients without GI symptoms did not show any association of gut motility with genotype. Furthermore, serotonin was significantly higher in diabetic patients who belonged to SS genotype compared to LS or LL genotype and who presented with diarrhea. Conclusion SS genotypes are prone to develop diarrhea because of faster gut motility resulting from higher serotonin levels as compared to LS and LL genotype in T2DM patients. (J Neurogastroenterol Motil 2021;27:240-247)
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